Thermal Stability of Metal-Silicide Nanocrystal Nonvolatile Memory with Barrier Engineered Tunnel Layers
DC Field | Value | Language |
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dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Kim, Seon Pil | - |
dc.contributor.author | Han, Dong Seok | - |
dc.contributor.author | Lee, Hyo Jun | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | You, Hee-Wook | - |
dc.contributor.author | Cho, Won-Ju | - |
dc.date.accessioned | 2022-07-07T14:16:31Z | - |
dc.date.available | 2022-07-07T14:16:31Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-10 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/144828 | - |
dc.description.abstract | WSi(2) nanocrystal nonvolatile, memory devices were fabricated with a silicon oxide-nitride-oxide (SiO(2): 2 nm/Si(3)N(4):2 nm/SiO(2): 3 nm) tunnel layer. WSi(2) nanocrystals of 2.5 nm diameters and a density of 3.6 x 10(12) cm(-2) were formed using radio frequency magnetron sputtering and annealing processes. The WSi(2) nanocrystal nonvolatile memory device exhibited strong thermal stability during writing/erasing operations at temperatures up to 125 degrees C. When the writing/erasing voltages were applied at +10 V/-10 V for 500 ms, the memory window of the initial similar to 2.6 V decreased by approximately 1.1 V at 25 degrees C and 0.4 V at 125 degrees C after 10(4) sec, respectively. These results show that WSi(2) nanocrystals with barrier-engineered tunnel layers are possible for application in nonvolatile memory devices. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Thermal Stability of Metal-Silicide Nanocrystal Nonvolatile Memory with Barrier Engineered Tunnel Layers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1166/jnn.2011.4302 | - |
dc.identifier.scopusid | 2-s2.0-84863141061 | - |
dc.identifier.wosid | 000298363900116 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.10, pp.9181 - 9184 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 11 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 9181 | - |
dc.citation.endPage | 9184 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordAuthor | WSi(2) | - |
dc.subject.keywordAuthor | Nanocrystals | - |
dc.subject.keywordAuthor | Nano-Floating Gate Memory | - |
dc.subject.keywordAuthor | Nonvolatile Memory | - |
dc.subject.keywordAuthor | Tunnel Layer | - |
dc.identifier.url | https://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000010/art00116 | - |
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