Thermal Stability of Metal-Silicide Nanocrystal Nonvolatile Memory with Barrier Engineered Tunnel Layers
- Authors
- Lee, Dong Uk; Kim, Seon Pil; Han, Dong Seok; Lee, Hyo Jun; Kim, Eun Kyu; You, Hee-Wook; Cho, Won-Ju
- Issue Date
- Oct-2011
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- WSi(2); Nanocrystals; Nano-Floating Gate Memory; Nonvolatile Memory; Tunnel Layer
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.10, pp.9181 - 9184
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 11
- Number
- 10
- Start Page
- 9181
- End Page
- 9184
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/144828
- DOI
- 10.1166/jnn.2011.4302
- ISSN
- 1533-4880
- Abstract
- WSi(2) nanocrystal nonvolatile, memory devices were fabricated with a silicon oxide-nitride-oxide (SiO(2): 2 nm/Si(3)N(4):2 nm/SiO(2): 3 nm) tunnel layer. WSi(2) nanocrystals of 2.5 nm diameters and a density of 3.6 x 10(12) cm(-2) were formed using radio frequency magnetron sputtering and annealing processes. The WSi(2) nanocrystal nonvolatile memory device exhibited strong thermal stability during writing/erasing operations at temperatures up to 125 degrees C. When the writing/erasing voltages were applied at +10 V/-10 V for 500 ms, the memory window of the initial similar to 2.6 V decreased by approximately 1.1 V at 25 degrees C and 0.4 V at 125 degrees C after 10(4) sec, respectively. These results show that WSi(2) nanocrystals with barrier-engineered tunnel layers are possible for application in nonvolatile memory devices.
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