Nonvolatile-Memory Characteristics of SiC Nanocrystals with Variable Oxide Thickness and Crested Tunnel Barriers
DC Field | Value | Language |
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dc.contributor.author | Han, Dong Seok | - |
dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Lee, Hyo Jun | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | You, Hee-Wook | - |
dc.contributor.author | Cho, Won-Ju | - |
dc.date.accessioned | 2022-07-07T14:27:41Z | - |
dc.date.available | 2022-07-07T14:27:41Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-07 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/144874 | - |
dc.description.abstract | The electrical characteristics of SiC nanocrystal nonvolatile-memory devices with variable oxide and crested tunnel barriers consisting of a SiO2/Si3N4/SiO2 (ONO) and a Si3N4/SiO2/Si3N4 (NON) layer, respectively, were investigated. The equivalent oxide thickness of the ONO and NON tunnel barriers were about 5.6 nm and 5.2 nm, respectively. When the +/-13 V bias voltage was applied for 500 ms, the threshold voltage shifts of the SiC-nanocrystal-embedded memory devices with ONO and NON tunnel barriers were about 2.4 V. The operation speeds of the memories with ONO and NON tunnel barriers under the +/-10 V applied pulse bias were approximately 5 and 20 ms, respectively. The field sensitivity of the ONO tunnel barrier was higher than that of the NON tunnel barrier during electron injection. The tunneling efficiency during the programming/erasing processes could be improved by the engineered tunnel barrier layer. Therefore, the SiC-nanocrystal-embedded memory device with an ONO tunnel barrier can be applied to nonvolatile-memory devices. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Nonvolatile-Memory Characteristics of SiC Nanocrystals with Variable Oxide Thickness and Crested Tunnel Barriers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1166/jnn.2011.4330 | - |
dc.identifier.scopusid | 2-s2.0-84863011647 | - |
dc.identifier.wosid | 000293663200050 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.7, pp.5883 - 5886 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 11 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 5883 | - |
dc.citation.endPage | 5886 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | Electrical characteristic | - |
dc.subject.keywordPlus | Equivalent oxide thickness | - |
dc.subject.keywordPlus | Field sensitivity | - |
dc.subject.keywordPlus | Memory device | - |
dc.subject.keywordPlus | NON | - |
dc.subject.keywordPlus | Non-volatile memories | - |
dc.subject.keywordPlus | ONO | - |
dc.subject.keywordPlus | Operation speed | - |
dc.subject.keywordPlus | Oxide thickness | - |
dc.subject.keywordPlus | SiC | - |
dc.subject.keywordPlus | Threshold voltage shifts | - |
dc.subject.keywordPlus | Tunnel barrier | - |
dc.subject.keywordPlus | Tunnel barrier layers | - |
dc.subject.keywordPlus | Tunneling efficiency | - |
dc.subject.keywordAuthor | Nano-Crystals | - |
dc.subject.keywordAuthor | SiC | - |
dc.subject.keywordAuthor | Nonvolatile Memory | - |
dc.subject.keywordAuthor | Tunnel Layer | - |
dc.subject.keywordAuthor | ONO | - |
dc.subject.keywordAuthor | NON | - |
dc.identifier.url | https://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000007/art00050 | - |
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