Nonvolatile-Memory Characteristics of SiC Nanocrystals with Variable Oxide Thickness and Crested Tunnel Barriers
- Authors
- Han, Dong Seok; Lee, Dong Uk; Lee, Hyo Jun; Kim, Eun Kyu; You, Hee-Wook; Cho, Won-Ju
- Issue Date
- Jul-2011
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Nano-Crystals; SiC; Nonvolatile Memory; Tunnel Layer; ONO; NON
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.7, pp.5883 - 5886
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 11
- Number
- 7
- Start Page
- 5883
- End Page
- 5886
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/144874
- DOI
- 10.1166/jnn.2011.4330
- ISSN
- 1533-4880
- Abstract
- The electrical characteristics of SiC nanocrystal nonvolatile-memory devices with variable oxide and crested tunnel barriers consisting of a SiO2/Si3N4/SiO2 (ONO) and a Si3N4/SiO2/Si3N4 (NON) layer, respectively, were investigated. The equivalent oxide thickness of the ONO and NON tunnel barriers were about 5.6 nm and 5.2 nm, respectively. When the +/-13 V bias voltage was applied for 500 ms, the threshold voltage shifts of the SiC-nanocrystal-embedded memory devices with ONO and NON tunnel barriers were about 2.4 V. The operation speeds of the memories with ONO and NON tunnel barriers under the +/-10 V applied pulse bias were approximately 5 and 20 ms, respectively. The field sensitivity of the ONO tunnel barrier was higher than that of the NON tunnel barrier during electron injection. The tunneling efficiency during the programming/erasing processes could be improved by the engineered tunnel barrier layer. Therefore, the SiC-nanocrystal-embedded memory device with an ONO tunnel barrier can be applied to nonvolatile-memory devices.
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