Self-defect-passivation by Br-enrichment in FA-doped Cs(1-x)FA(x)PbBr(3) quantum dots: towards high-performance quantum dot light-emitting diodesopen access
- Authors
- Park, Young Ran; Eom, Sangwon; Kim, Hong Hee; Choi, Won Kook; Kang, Youngjong
- Issue Date
- Sep-2020
- Publisher
- NATURE RESEARCH
- Citation
- SCIENTIFIC REPORTS, v.10, no.1, pp.1 - 10
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCIENTIFIC REPORTS
- Volume
- 10
- Number
- 1
- Start Page
- 1
- End Page
- 10
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/145225
- DOI
- 10.1038/s41598-020-71666-8
- ISSN
- 2045-2322
- Abstract
- Halide vacancy defect is one of the major origins of non-radiative recombination in the lead halide perovskite light emitting devices (LEDs). Hence the defect passivation is highly demanded for the high-performance perovskite LEDs. Here, we demonstrated that FA doping led to the enrichment of Br in Cs(1-x)FA(x)PbBr(3) QDs. Due to the defect passivation by the enriched Br, the trap density in Cs(1-x)FA(x)PbBr(3) significantly decreased after FA doping, and which improved the optical properties of Cs(1-x)FA(x)PbBr(3) QDs and their QD-LEDs. PLQY of Cs(1-x)FA(x)PbBr(3) QDs increased from 76.8% (x = 0) to 85.1% (x = 0.04), and L-max and CEmax of Cs(1-x)FA(x)PbBr(3) QD-LEDs were improved from L-max = 2880 cd m(-2) and CEmax = 1.98 cd A(-1) (x = 0) to L-max = 5200 cd m(-2) and CEmax = 3.87 cd A(-1) (x = 0.04). Cs(1-x)FA(x)PbBr(3) QD-LED device structure was optimized by using PVK as a HTL and ZnO modified with b-PEI as an ETL. The energy band diagram of Cs(1-x)FA(x)PbBr(3) QD-LEDs deduced by UPS analyses.
- Files in This Item
-
- Appears in
Collections - 서울 자연과학대학 > 서울 화학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/145225)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.