Modulation of Junction Modes in SnSe2/MoTe2 Broken-Gap van der Waals Heterostructure for Multifunctional Devices
- Authors
- Lee, Juchan; Ngoc Thanh Duong; Bang, Seungho; Park, Chulho; Duc Anh Nguyen; Jeon, Hobeom; Jang, Jiseong; Oh, Hye Min; Jeong, Mun Seok
- Issue Date
- Apr-2020
- Publisher
- AMER CHEMICAL SOC
- Keywords
- transition-metal dichalcogenides; tunnel diode; van der Waals heterostructure; photovoltaic effect; infrared photodetector; broken-gap band alignment
- Citation
- NANO LETTERS, v.20, no.4, pp.2370 - 2370
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANO LETTERS
- Volume
- 20
- Number
- 4
- Start Page
- 2370
- End Page
- 2370
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/145831
- DOI
- 10.1021/acs.nanolett.9b04926
- ISSN
- 1530-6984
- Abstract
- We study the electronic and optoelectronic properties of a broken-gap heterojunction composed of SnSe2 and MoTe2 with gate-controlled junction modes. Owing to the interband tunneling current, our device can act as an Esaki diode and a backward diode with a peak-to-valley current ratio approaching 5.7 at room temperature. Furthermore, under an 811 nm laser irradiation the heterostructure exhibits a photodetectivity of up to 7.5 x 10(12) Jones. In addition, to harness the electrostatic gate bias, V, can be tuned from negative to positive by switching from the accumulation mode to the depletion mode of the heterojunction. Additionally, a photovoltaic effect with a fill factor exceeding 41% was observed, which highlights the significant potential for optoelectronic applications. This study not only demonstrates high- performance multifunctional optoelectronics based on the SnSe2/MoTe2 heterostructure but also provides a comprehensive understanding of broken-band alignment and its applications.
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