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Ferromagnetic properties of MoS2 film doped by Fe using chemical vapour deposition
- Authors
- Park, Chang-Soo; Shon, Yoon; Lee, Juwon; Kim, Eun Kyu
- Issue Date
- Feb-2020
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- MoS2; Ferromagnetic semiconductor; Raman; Curie
- Citation
- SOLID STATE COMMUNICATIONS, v.306, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID STATE COMMUNICATIONS
- Volume
- 306
- Start Page
- 1
- End Page
- 4
- ISSN
- 0038-1098
- Abstract
- We have investigated the ferromagnetic properties of MoS2 thin film doped by iron using chemical vapour deposition. The structure of film was determined to be poly-crystalline with various phases. The iron doped MoS2 film shows that the ferromagnetic hysteresis appears at room temperature, and also indicated two Curie temperatures. The remnant magnetization and coercive field at room temperature are 36 emu/cm(3) and 44 Oe. The elemental atomic concentration of iron doped MoS2 measured by x-ray photoelectron spectroscopy was 0.69 at. %.
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