Fermi-Level Engineering of Atomic Layer-Deposited Zinc Oxide Thin Films for a Vertically Stacked Inverter
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoon, Minho | - |
dc.contributor.author | Park, Jongdae | - |
dc.contributor.author | Tran, Dai Cuong | - |
dc.contributor.author | Sung, Myung Mo | - |
dc.date.accessioned | 2022-07-08T15:20:42Z | - |
dc.date.available | 2022-07-08T15:20:42Z | - |
dc.date.created | 2021-05-11 | - |
dc.date.issued | 2020-02 | - |
dc.identifier.issn | 2637-6113 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/146283 | - |
dc.description.abstract | We report here atomic layer-deposited ZnO FETs and an effective electron doping method based on Al2O3 layer for high-performance transistors and its circuit application. Through the atomic layer deposition, an ultrathin and flat ZnO film (5 nm) has been deposited successfully where our ZnO FETs initially show n-type enhancement-mode transfer characteristics. The threshold voltage and the electron field-effect mobility of the device are 42 V and 2.8 cm(2) respectively. After the deposition of the top Al2O3 layer, our ZnO FETs exhibit depletion-mode transfer characteristics with enhanced mobility. The threshold voltage (V-th) shifts to -38 V and the electron field-effect mobility increases by a factor of 2. Analyzed by a four-point probe and Hall and temperature-variable current-voltage measurements, Al2O3-induced doping is considered the main reason for the noticeable changes by minimizing the trap states in our ZnO films. Furthermore, a vertically stacked low-voltage n-type ZnO inverter was successfully fabricated utilizing the enhancement- and depletion-mode ZnO FETs with a voltage gain of similar to 1.5 at low supplied voltage. We thus conclude that the atomic layer-deposited ZnO FETs with Al2O3-induced doping offers practical benefits for the high-performance transistors and its circuit applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Fermi-Level Engineering of Atomic Layer-Deposited Zinc Oxide Thin Films for a Vertically Stacked Inverter | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sung, Myung Mo | - |
dc.identifier.doi | 10.1021/acsaelm.9b00785 | - |
dc.identifier.scopusid | 2-s2.0-85088605450 | - |
dc.identifier.wosid | 000550584300027 | - |
dc.identifier.bibliographicCitation | ACS APPLIED ELECTRONIC MATERIALS, v.2, no.2, pp.537 - 544 | - |
dc.relation.isPartOf | ACS APPLIED ELECTRONIC MATERIALS | - |
dc.citation.title | ACS APPLIED ELECTRONIC MATERIALS | - |
dc.citation.volume | 2 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 537 | - |
dc.citation.endPage | 544 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | PIXEL CIRCUIT | - |
dc.subject.keywordPlus | LOW-POWER | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | IMPROVEMENT | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordAuthor | flexible organic light-emitting diode displays | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | zinc oxide transistors | - |
dc.subject.keywordAuthor | doping | - |
dc.subject.keywordAuthor | field-effect transistor Dasity | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsaelm.9b00785 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.