Fermi-Level Engineering of Atomic Layer-Deposited Zinc Oxide Thin Films for a Vertically Stacked Inverter
- Authors
- Yoon, Minho; Park, Jongdae; Tran, Dai Cuong; Sung, Myung Mo
- Issue Date
- Feb-2020
- Publisher
- AMER CHEMICAL SOC
- Keywords
- flexible organic light-emitting diode displays; atomic layer deposition; zinc oxide transistors; doping; field-effect transistor Dasity
- Citation
- ACS APPLIED ELECTRONIC MATERIALS, v.2, no.2, pp.537 - 544
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED ELECTRONIC MATERIALS
- Volume
- 2
- Number
- 2
- Start Page
- 537
- End Page
- 544
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/146283
- DOI
- 10.1021/acsaelm.9b00785
- ISSN
- 2637-6113
- Abstract
- We report here atomic layer-deposited ZnO FETs and an effective electron doping method based on Al2O3 layer for high-performance transistors and its circuit application. Through the atomic layer deposition, an ultrathin and flat ZnO film (5 nm) has been deposited successfully where our ZnO FETs initially show n-type enhancement-mode transfer characteristics. The threshold voltage and the electron field-effect mobility of the device are 42 V and 2.8 cm(2) respectively. After the deposition of the top Al2O3 layer, our ZnO FETs exhibit depletion-mode transfer characteristics with enhanced mobility. The threshold voltage (V-th) shifts to -38 V and the electron field-effect mobility increases by a factor of 2. Analyzed by a four-point probe and Hall and temperature-variable current-voltage measurements, Al2O3-induced doping is considered the main reason for the noticeable changes by minimizing the trap states in our ZnO films. Furthermore, a vertically stacked low-voltage n-type ZnO inverter was successfully fabricated utilizing the enhancement- and depletion-mode ZnO FETs with a voltage gain of similar to 1.5 at low supplied voltage. We thus conclude that the atomic layer-deposited ZnO FETs with Al2O3-induced doping offers practical benefits for the high-performance transistors and its circuit applications.
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