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Improvement in carrier mobility of ZnON transistor by tantalum encapsulation
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, MJ | - |
| dc.contributor.author | Jeong, JK | - |
| dc.date.accessioned | 2022-07-09T00:28:54Z | - |
| dc.date.available | 2022-07-09T00:28:54Z | - |
| dc.date.created | 2021-07-14 | - |
| dc.date.issued | 2019-11 | - |
| dc.identifier.issn | 1883-2490 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/146733 | - |
| dc.description.abstract | The TaOx/ZnON thin-film stack showed a more uniform distribution of nanocrystalline ZnON with an increased stoichiometric anion lattice compared to control ZnON thin-films. Significantly, improved mobility of 89.4 cm2/Vs were achieved for TaOx/ZnON TFTs. This improvement can be explained by the removal and passivation effect of TaOx film on ZnON.. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | International Display Workshops | - |
| dc.title | Improvement in carrier mobility of ZnON transistor by tantalum encapsulation | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Jeong, JK | - |
| dc.identifier.doi | 10.36463/idw.2019.0508 | - |
| dc.identifier.scopusid | 2-s2.0-85105277397 | - |
| dc.identifier.bibliographicCitation | Proceedings of the International Display Workshops, v.2, pp.508 - 511 | - |
| dc.relation.isPartOf | Proceedings of the International Display Workshops | - |
| dc.citation.title | Proceedings of the International Display Workshops | - |
| dc.citation.volume | 2 | - |
| dc.citation.startPage | 508 | - |
| dc.citation.endPage | 511 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Conference Paper | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Hall mobility | - |
| dc.subject.keywordPlus | Hole mobility | - |
| dc.subject.keywordPlus | Nanocrystals | - |
| dc.subject.keywordPlus | Tantalum | - |
| dc.subject.keywordPlus | Thin film transistors | - |
| dc.subject.keywordPlus | Thin films | - |
| dc.subject.keywordPlus | Nanocrystallines | - |
| dc.subject.keywordPlus | Passivation effect | - |
| dc.subject.keywordPlus | Thin film stacks | - |
| dc.subject.keywordPlus | Uniform distribution | - |
| dc.subject.keywordPlus | Zinc compounds | - |
| dc.subject.keywordAuthor | Encapsulation | - |
| dc.subject.keywordAuthor | Scavenging effect | - |
| dc.subject.keywordAuthor | Tantalum oxide | - |
| dc.subject.keywordAuthor | Thin-film Transistors | - |
| dc.subject.keywordAuthor | Zinc oxynitride | - |
| dc.identifier.url | https://confit.atlas.jp/guide/organizer/idw/idw2019/subject/AMDp1-1/search?page=13 | - |
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)