The effect of oxygen partial pressure on band gap modulation of Ga2O3 grown by pulsed laser deposition
DC Field | Value | Language |
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dc.contributor.author | Vu, Thi Kim Oanh | - |
dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.date.accessioned | 2022-07-09T06:17:00Z | - |
dc.date.available | 2022-07-09T06:17:00Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2019-10 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/147077 | - |
dc.description.abstract | The influence of oxygen partial pressure and annealing on the properties of thin films of beta-Ga2O3 grown by pulsed laser deposition were studied. The Ga2O3 samples were deposited at a substrate temperature of 250 degrees C at an oxygen pressure of 0-50 mTorr and then annealed at a temperature of 600 degrees C. We observed the crystallinity of Ga2O3 enhanced with annealing and with increasing oxygen pressure. The full width at half maximum of annealed beta -Ga2O3 ((4) over bar 01) peaks decreased, corresponding to the grain size increasing from 6.76 nm to 11.25 nm. The conductivity of the obtained, as-grown Ga2O3 films increased with oxygen pressure from 2.1 to 7.9 mScm(-1). As a result, the conductance and the energy band gap of beta-Ga2O3 without annealing were controlled by the oxygen partial pressure. This was attributed to the oxygen vacancies, based on the composition ratio between O and Ga ions. These results clearly showed that the energy band gap and conductance of beta-Ga2O3 thin films could be controlled in such a way that could be utilized for high-performance photo-electronic devices. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | The effect of oxygen partial pressure on band gap modulation of Ga2O3 grown by pulsed laser deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1016/j.jallcom.2019.07.326 | - |
dc.identifier.scopusid | 2-s2.0-85069973194 | - |
dc.identifier.wosid | 000485039800097 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.806, pp.874 - 880 | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 806 | - |
dc.citation.startPage | 874 | - |
dc.citation.endPage | 880 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | GALLIUM OXIDE | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | SENSORS | - |
dc.subject.keywordAuthor | Ga2O3 | - |
dc.subject.keywordAuthor | Band gap | - |
dc.subject.keywordAuthor | Oxygen | - |
dc.subject.keywordAuthor | Vacancy | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0925838819328415?via%3Dihub | - |
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