The effect of oxygen partial pressure on band gap modulation of Ga2O3 grown by pulsed laser deposition
- Authors
- Vu, Thi Kim Oanh; Lee, Dong Uk; Kim, Eun Kyu
- Issue Date
- Oct-2019
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Ga2O3; Band gap; Oxygen; Vacancy
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.806, pp.874 - 880
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 806
- Start Page
- 874
- End Page
- 880
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/147077
- DOI
- 10.1016/j.jallcom.2019.07.326
- ISSN
- 0925-8388
- Abstract
- The influence of oxygen partial pressure and annealing on the properties of thin films of beta-Ga2O3 grown by pulsed laser deposition were studied. The Ga2O3 samples were deposited at a substrate temperature of 250 degrees C at an oxygen pressure of 0-50 mTorr and then annealed at a temperature of 600 degrees C. We observed the crystallinity of Ga2O3 enhanced with annealing and with increasing oxygen pressure. The full width at half maximum of annealed beta -Ga2O3 ((4) over bar 01) peaks decreased, corresponding to the grain size increasing from 6.76 nm to 11.25 nm. The conductivity of the obtained, as-grown Ga2O3 films increased with oxygen pressure from 2.1 to 7.9 mScm(-1). As a result, the conductance and the energy band gap of beta-Ga2O3 without annealing were controlled by the oxygen partial pressure. This was attributed to the oxygen vacancies, based on the composition ratio between O and Ga ions. These results clearly showed that the energy band gap and conductance of beta-Ga2O3 thin films could be controlled in such a way that could be utilized for high-performance photo-electronic devices.
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