Characteristics of p-Type Conduction in P-Doped MoS2 by Phosphorous Pentoxide during Chemical Vapor Deposition
DC Field | Value | Language |
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dc.contributor.author | Lee, Jae Sang | - |
dc.contributor.author | Park, Chang-Soo | - |
dc.contributor.author | Kim, Tae Young | - |
dc.contributor.author | Kim, Yoon Sok | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.date.accessioned | 2022-07-09T07:35:15Z | - |
dc.date.available | 2022-07-09T07:35:15Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2019-09 | - |
dc.identifier.issn | 2079-4991 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/147208 | - |
dc.description.abstract | We demonstrated p-type conduction in MoS2 grown with phosphorous pentoxide via chemical vapor deposition (CVD). Monolayer MoS2 with a triangular shape and 15-mu m grains was confirmed by atomic force microscopy. The difference between the Raman signals of the A(1g) and E-2g(1) modes for both the pristine and P-doped samples was 19.4 cm(-1). In the X-ray photoelectron spectroscopy results, the main core level peaks of P-doped MoS2 downshifted by about 0.5 eV to a lower binding energy compared to the pristine material. Field-effect transistors (FETs) fabricated with the P-doped monolayer MoS2 showed p-type conduction with a field-effect mobility of 0.023 cm(2)/V.s and an on/off current ratio of 10(3), while FETs with the pristine MoS2 showed n-type behavior with a field-effect mobility of 29.7 cm(2)/V.s and an on/off current ratio of 10(5). The carriers in the FET channel were identified as holes with a concentration of 1.01 x 10(11) cm(-2) in P-doped MoS2, while the pristine material had an electron concentration of 6.47 x 10(11) cm(-2). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.title | Characteristics of p-Type Conduction in P-Doped MoS2 by Phosphorous Pentoxide during Chemical Vapor Deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.3390/nano9091278 | - |
dc.identifier.scopusid | 2-s2.0-85073391794 | - |
dc.identifier.wosid | 000489101900095 | - |
dc.identifier.bibliographicCitation | NANOMATERIALS, v.9, no.9, pp.1 - 7 | - |
dc.relation.isPartOf | NANOMATERIALS | - |
dc.citation.title | NANOMATERIALS | - |
dc.citation.volume | 9 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | EVOLUTION | - |
dc.subject.keywordAuthor | chemical vapor deposition | - |
dc.subject.keywordAuthor | P2O5 | - |
dc.subject.keywordAuthor | p-type conduction | - |
dc.subject.keywordAuthor | P-doped MoS2 | - |
dc.identifier.url | https://www.mdpi.com/2079-4991/9/9/1278 | - |
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