Characteristics of p-Type Conduction in P-Doped MoS2 by Phosphorous Pentoxide during Chemical Vapor Depositionopen access
- Authors
- Lee, Jae Sang; Park, Chang-Soo; Kim, Tae Young; Kim, Yoon Sok; Kim, Eun Kyu
- Issue Date
- Sep-2019
- Publisher
- MDPI
- Keywords
- chemical vapor deposition; P2O5; p-type conduction; P-doped MoS2
- Citation
- NANOMATERIALS, v.9, no.9, pp.1 - 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOMATERIALS
- Volume
- 9
- Number
- 9
- Start Page
- 1
- End Page
- 7
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/147208
- DOI
- 10.3390/nano9091278
- ISSN
- 2079-4991
- Abstract
- We demonstrated p-type conduction in MoS2 grown with phosphorous pentoxide via chemical vapor deposition (CVD). Monolayer MoS2 with a triangular shape and 15-mu m grains was confirmed by atomic force microscopy. The difference between the Raman signals of the A(1g) and E-2g(1) modes for both the pristine and P-doped samples was 19.4 cm(-1). In the X-ray photoelectron spectroscopy results, the main core level peaks of P-doped MoS2 downshifted by about 0.5 eV to a lower binding energy compared to the pristine material. Field-effect transistors (FETs) fabricated with the P-doped monolayer MoS2 showed p-type conduction with a field-effect mobility of 0.023 cm(2)/V.s and an on/off current ratio of 10(3), while FETs with the pristine MoS2 showed n-type behavior with a field-effect mobility of 29.7 cm(2)/V.s and an on/off current ratio of 10(5). The carriers in the FET channel were identified as holes with a concentration of 1.01 x 10(11) cm(-2) in P-doped MoS2, while the pristine material had an electron concentration of 6.47 x 10(11) cm(-2).
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