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Plasmonic Transition Metal Carbide Electrodes for High-Performance InSe Photodetectors

Authors
Yang, YajieJeon, JaehoPark, Jin-HongJeong, Mun SeokLee, Byoung HunHwang, EuyheonLee, Sungjoo
Issue Date
Aug-2019
Publisher
American Chemical Society
Keywords
2-dimensional material; avalanche photodetector; InSe; MXene; plasmonic effect
Citation
ACS Nano, v.13, no.8, pp.8804 - 8810
Indexed
SCIE
SCOPUS
Journal Title
ACS Nano
Volume
13
Number
8
Start Page
8804
End Page
8810
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/147280
DOI
10.1021/acsnano.9b01941
ISSN
1936-0851
Abstract
We demonstrate the application of MXenes, metallic 2D materials of transition-metal carbides, as excellent electrode materials for photonic devices. In this study, we have fabricated an InSe-based photodetector with a Ti2CTx electrode. The photodetector with few-layer, atomically thin, Ti2CTx (MXene) electrodes shows the avalanche carrier multiplication effect, which leads to high device performance. To improve the performance of the InSe/Ti2CTx avalanche photodetector, we can pattern Ti2CTx into nanoribbon arrays (a plasmonic grating structure), which enhances light absorption of the photodetector. The plasmonic InSe/Ti2CTx avalanche photodetector exhibits low dark current (3 nA), high responsivity (1 X 10(5) AW(-1)), and high detectivity (7.3 X 10(12) Jones).
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