Plasmonic Transition Metal Carbide Electrodes for High-Performance InSe Photodetectors
- Authors
- Yang, Yajie; Jeon, Jaeho; Park, Jin-Hong; Jeong, Mun Seok; Lee, Byoung Hun; Hwang, Euyheon; Lee, Sungjoo
- Issue Date
- Aug-2019
- Publisher
- American Chemical Society
- Keywords
- 2-dimensional material; avalanche photodetector; InSe; MXene; plasmonic effect
- Citation
- ACS Nano, v.13, no.8, pp.8804 - 8810
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS Nano
- Volume
- 13
- Number
- 8
- Start Page
- 8804
- End Page
- 8810
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/147280
- DOI
- 10.1021/acsnano.9b01941
- ISSN
- 1936-0851
- Abstract
- We demonstrate the application of MXenes, metallic 2D materials of transition-metal carbides, as excellent electrode materials for photonic devices. In this study, we have fabricated an InSe-based photodetector with a Ti2CTx electrode. The photodetector with few-layer, atomically thin, Ti2CTx (MXene) electrodes shows the avalanche carrier multiplication effect, which leads to high device performance. To improve the performance of the InSe/Ti2CTx avalanche photodetector, we can pattern Ti2CTx into nanoribbon arrays (a plasmonic grating structure), which enhances light absorption of the photodetector. The plasmonic InSe/Ti2CTx avalanche photodetector exhibits low dark current (3 nA), high responsivity (1 X 10(5) AW(-1)), and high detectivity (7.3 X 10(12) Jones).
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