Threshold switching-based bidirectional nonlinear characteristics of ZnTe selectors for 3D stackable crossbar array applications
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, Gabriel | - |
dc.contributor.author | Kim, Tae Yoon | - |
dc.contributor.author | Hyun, Da Seul | - |
dc.contributor.author | Beak, Gwang Ho | - |
dc.contributor.author | Park, Jae Gun | - |
dc.contributor.author | Hong, Jin Pyo | - |
dc.date.accessioned | 2022-07-11T09:29:18Z | - |
dc.date.available | 2022-07-11T09:29:18Z | - |
dc.date.created | 2021-05-14 | - |
dc.date.issued | 2018-09 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/149317 | - |
dc.description.abstract | Three dimensional (3D) stackable memory devices including crossbar array frames have emerged as a promising candidate for the realization of high-density non-volatile memory electronics. However, the crossbar array using two terminal element is highly susceptible to sneak path issues that arise from unintended leakage current since each cell in a row and column is connected to each other. Thus, the integration of a suitable selector as a two way switches is crucially required. Here, we address electrical features of ZnTebased selector, ensuring high bidirectional non-linearity of more than 10⁴ . Typical threshold switching (TS) after forming process was clearly observed, along with attaining the exponential increase in the Off-current with increasing voltages. We propose the possible conduction nature in the Off-current by utilizing a modified Poole-Frankel (PF) model. The observed threshold voltages of the selector exhibited a thickness dependency, thereby implying an adjustable nature in the device. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | 일본 물리학회 | - |
dc.title | Threshold switching-based bidirectional nonlinear characteristics of ZnTe selectors for 3D stackable crossbar array applications | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jin Pyo | - |
dc.identifier.doi | 10.7567/SSDM.2018.B-2-02 | - |
dc.identifier.bibliographicCitation | 50th anniversary of international conference on solid state devices and materials, pp.101 - 102 | - |
dc.relation.isPartOf | 50th anniversary of international conference on solid state devices and materials | - |
dc.citation.title | 50th anniversary of international conference on solid state devices and materials | - |
dc.citation.startPage | 101 | - |
dc.citation.endPage | 102 | - |
dc.type.rims | ART | - |
dc.type.docType | Proceeding | - |
dc.description.journalClass | 3 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | other | - |
dc.identifier.url | https://confit.atlas.jp/guide/organizer/ssdm/ssdm2018/subject/B-2-02/detail | - |
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