Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaOx bipolar resistive switching
DC Field | Value | Language |
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dc.contributor.author | Kim, Taeyoon | - |
dc.contributor.author | Baek, Gwangho | - |
dc.contributor.author | Yang, Seungmo | - |
dc.contributor.author | Yang, Jung Yup | - |
dc.contributor.author | Yoon, Kap Soo | - |
dc.contributor.author | Kim, Soo Gil | - |
dc.contributor.author | Lee, Jae Yeon | - |
dc.contributor.author | Im, Hyun Sik | - |
dc.contributor.author | Hong, Jin Pyo | - |
dc.date.accessioned | 2022-07-11T17:27:51Z | - |
dc.date.available | 2022-07-11T17:27:51Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2018-06 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/149965 | - |
dc.description.abstract | Recent advances in oxide-based resistive switching devices have made these devices very promising candidates for future nonvolatile memory applications. However, several key issues remain that affect resistive switching. One is the need for generic alternative electrodes with thermally robust resistive switching characteristics in as-grown and high-temperature annealed states. Here, we studied the electrical characteristics of Ta2O5-x, oxide-based bipolar resistive frames for various TaNx bottoms. Control of the nitrogen content of the TaNx, electrode is a key factor that governs variations in its oxygen affinity and structural phase. We analyzed the composition and chemical bonding states of as-grown and annealed Ta2O5-x and Tall. layers and characterized the TaNx electrode-dependent switching behavior in terms of the electrode's oxygen affinity. Our experimental findings can aid the development of advanced resistive switching devices with thermal stability up to 400 degrees C. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaOx bipolar resistive switching | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jin Pyo | - |
dc.identifier.doi | 10.1038/s41598-018-26997-y | - |
dc.identifier.scopusid | 2-s2.0-85048177478 | - |
dc.identifier.wosid | 000434011100019 | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.8, no.1, pp.1 - 9 | - |
dc.relation.isPartOf | SCIENTIFIC REPORTS | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 8 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.subject.keywordPlus | INSULATOR-METAL CAPACITORS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | IMPROVEMENT | - |
dc.identifier.url | https://www.nature.com/articles/s41598-018-26997-y | - |
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