Evolution of two-dimensional plasma parameters in the plane of the wafer during the E- to H- and H- to E-mode transition in an inductively coupled plasma

Abstract

The evolution of plasma parameters during the transition from E- to H- and from H- to E-mode is measured at the wafer level two-dimensionally at low and high pressures. The plasma parameters, such as electron density and electron temperature, are obtained through a floating harmonic sideband method. During the E- to H-mode transition, while the electron kinetics remains in the non-local regime at low pressure, the electron kinetics is changed from the nonlocal to the local regime at high pressure. The two-dimensional profiles of the electron density at two different pressures have similar convex shape despite different electron kinetics. However, in the case of the electron temperature, at high pressure, the profiles of the electron temperature are changed from flat to convex shape. These results can be understood by the diffusion of the plasma to the wafer-level probe. Moreover, between the transition of E to H and reverse H to E, hysteresis is observed even at the wafer level. The hysteresis is clearly shown at high pressure compared to low pressure. This can be explained by a variation of collisional energy loss including effects of electron energy distribution function (bi-Maxwellian, Maxwellian, Druyvesteyn distribution) on the rate constant and multistep ionization of excited state atoms. During the E- to H-mode transition, Maxwellization is caused by increased electron-electron collisions, which reduces the collisional energy loss at high pressure (Druyvesteyn distribution) and increases it at low pressure (bi-Maxwellian distribution). Thus, the hysteresis is intensified at high pressure because the reduced collisional energy loss leads to higher ionization efficiency.