Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistorsopen access
- Authors
- Nam, Sooji; Jeong, Yong Jin; Kim, Joo Yeon; Yang, Hansol; Jang, Jaeyoung
- Issue Date
- Jan-2019
- Publisher
- MDPI
- Keywords
- graphene oxide; polystyrene; gate dielectric; low voltage; organic field-effect transistor
- Citation
- APPLIED SCIENCES-BASEL, v.9, no.1, pp.1 - 8
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED SCIENCES-BASEL
- Volume
- 9
- Number
- 1
- Start Page
- 1
- End Page
- 8
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/15131
- DOI
- 10.3390/app9010002
- ISSN
- 2076-3417
- Abstract
- Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS—a hydrophobic polymer—onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm−2. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm2 V−1 s−1 within a low operating voltage of −5 V.
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