High performance n-type organic-inorganic nanohybrid semiconductors for flexible electronic devices
- Authors
- Park, Yerok; Han, Kyu S.; Lee, Byoung H.; Cho, Sangho; Lee, Kwang H.; Im, Seongil; Sung, Myung M.
- Issue Date
- Feb-2011
- Publisher
- ELSEVIER
- Keywords
- Organic-inorganic nanohybrid semiconductors; Molecular layer deposition; Atomic layer deposition; ZnO; Organic thin film transistors
- Citation
- ORGANIC ELECTRONICS, v.12, no.2, pp.348 - 352
- Indexed
- SCIE
SCOPUS
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 12
- Number
- 2
- Start Page
- 348
- End Page
- 352
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/151333
- DOI
- 10.1016/j.orgel.2010.11.026
- ISSN
- 1566-1199
- Abstract
- We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of 150 degrees C by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good thermal and mechanical stability, good flexibility, transparent in the visible range, and excellent field effect mobility (>7cm(2)/V s) under low voltage operation (from -1 to 3 V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes.
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