High photoresponsivity from multilayer MoS2/Si heterojunction diodes formed by vertically stacking
DC Field | Value | Language |
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dc.contributor.author | Song, Da Ye | - |
dc.contributor.author | Chu, Dongil | - |
dc.contributor.author | Lee, Seung Kyo | - |
dc.contributor.author | Pak, Sang Woo | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.date.accessioned | 2022-07-13T15:58:29Z | - |
dc.date.available | 2022-07-13T15:58:29Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2017-09 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/151755 | - |
dc.description.abstract | We investigated a vertically stacked p(+)-n heterojunction diode consisting of a two-dimensional (2D) molybdenum disulfide (MoS2) crystal and a heavily doped p(+)-type Si substrate. The MoS2 flakes are transferred onto p(+)-Si substrates by using a scotch tape-based exfoliation method. The performances of n-MoS2/p(+)-Si diodes are investigated by I-V measurement under light illumination using light emitting diodes with various wavelengths. It appears that multilayer MoS2 has sufficient thickness to absorb incident light from the visible to near-infrared range with a high sensitivity. With the advantages of a simple device structure as well as improved contact quality between the MoS2 and silicon interface, an ideality factor of 1.09 can be achieved. The diodes reveal an ultra-high photoresponsivity of about 980 A/W at a wavelength of 525 nm with a strong dependence on the light wavelength and intensity, while they show a high specific detectivity on the order of 10(9) cm.Hz(1/2/)W from the visible to near infrared spectral ranges. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | High photoresponsivity from multilayer MoS2/Si heterojunction diodes formed by vertically stacking | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1063/1.4994740 | - |
dc.identifier.scopusid | 2-s2.0-85030160857 | - |
dc.identifier.wosid | 000412099600029 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.122, no.12, pp.1 - 5 | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 122 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | HIGH-RESPONSIVITY | - |
dc.subject.keywordPlus | HIGH-DETECTIVITY | - |
dc.subject.keywordPlus | PHOTOTRANSISTORS | - |
dc.subject.keywordPlus | DRIVEN | - |
dc.subject.keywordPlus | WS2 | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.4994740 | - |
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