High photoresponsivity from multilayer MoS2/Si heterojunction diodes formed by vertically stacking
- Authors
- Song, Da Ye; Chu, Dongil; Lee, Seung Kyo; Pak, Sang Woo; Kim, Eun Kyu
- Issue Date
- Sep-2017
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.122, no.12, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 122
- Number
- 12
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/151755
- DOI
- 10.1063/1.4994740
- ISSN
- 0021-8979
- Abstract
- We investigated a vertically stacked p(+)-n heterojunction diode consisting of a two-dimensional (2D) molybdenum disulfide (MoS2) crystal and a heavily doped p(+)-type Si substrate. The MoS2 flakes are transferred onto p(+)-Si substrates by using a scotch tape-based exfoliation method. The performances of n-MoS2/p(+)-Si diodes are investigated by I-V measurement under light illumination using light emitting diodes with various wavelengths. It appears that multilayer MoS2 has sufficient thickness to absorb incident light from the visible to near-infrared range with a high sensitivity. With the advantages of a simple device structure as well as improved contact quality between the MoS2 and silicon interface, an ideality factor of 1.09 can be achieved. The diodes reveal an ultra-high photoresponsivity of about 980 A/W at a wavelength of 525 nm with a strong dependence on the light wavelength and intensity, while they show a high specific detectivity on the order of 10(9) cm.Hz(1/2/)W from the visible to near infrared spectral ranges.
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