Combination-Encoding Content-Addressable Memory With High Content Density
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Guhyun | - |
dc.contributor.author | Kornijcuk, Vladimir | - |
dc.contributor.author | Kim, Jeeson | - |
dc.contributor.author | Kim, Dohun | - |
dc.contributor.author | Hwang, Cheol Seong | - |
dc.contributor.author | Jeong, Doo Seok | - |
dc.date.accessioned | 2021-08-02T12:29:06Z | - |
dc.date.available | 2021-08-02T12:29:06Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2019 | - |
dc.identifier.issn | 2169-3536 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/15183 | - |
dc.description.abstract | Recently, resistance switch-based content-addressable memory (RCAM) has been proposed as an alternative to the mainstream static random-access memory-based CAM because of its high integration potential and low static energy consumption. However, RCAM has a lower data density due to the use of a pair of resistance switches for a single bit of contents (0.5 bit/switch) than resistive random access memory (1 bit/switch). In this paper, we propose a new type of RCAM referred to as combination-encoding CAM (CECAM). In the N-CECAM, a single unit consists of N high and N low resistance state switches whose combination collectively represents binary contents, yielding a data density of approximately 0.85 bit/switch when N = 10, for instance. The key to the CECAM is the encoding of an n-bit search key as a 2N-digit key and its decoding. To this end, we propose a simple algorithm for encoding and decoding and its implementation in digital circuitry. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Combination-Encoding Content-Addressable Memory With High Content Density | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Doo Seok | - |
dc.identifier.doi | 10.1109/ACCESS.2019.2942150 | - |
dc.identifier.scopusid | 2-s2.0-85077818983 | - |
dc.identifier.wosid | 000560171600001 | - |
dc.identifier.bibliographicCitation | IEEE ACCESS, v.7, pp.137620 - 137628 | - |
dc.relation.isPartOf | IEEE ACCESS | - |
dc.citation.title | IEEE ACCESS | - |
dc.citation.volume | 7 | - |
dc.citation.startPage | 137620 | - |
dc.citation.endPage | 137628 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Computer Science | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Telecommunications | - |
dc.relation.journalWebOfScienceCategory | Computer Science, Information Systems | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Telecommunications | - |
dc.subject.keywordPlus | TERNARY CAM | - |
dc.subject.keywordAuthor | Resistance | - |
dc.subject.keywordAuthor | Encoding | - |
dc.subject.keywordAuthor | Table lookup | - |
dc.subject.keywordAuthor | Random access memory | - |
dc.subject.keywordAuthor | Nonvolatile memory | - |
dc.subject.keywordAuthor | Switches | - |
dc.subject.keywordAuthor | Delays | - |
dc.subject.keywordAuthor | Content-addressable memory | - |
dc.subject.keywordAuthor | combination-encoding content-addressable memory | - |
dc.subject.keywordAuthor | resistance switch | - |
dc.subject.keywordAuthor | crossbar array | - |
dc.subject.keywordAuthor | content density | - |
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