Combination-Encoding Content-Addressable Memory With High Content Densityopen access
- Authors
- Kim, Guhyun; Kornijcuk, Vladimir; Kim, Jeeson; Kim, Dohun; Hwang, Cheol Seong; Jeong, Doo Seok
- Issue Date
- 2019
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Resistance; Encoding; Table lookup; Random access memory; Nonvolatile memory; Switches; Delays; Content-addressable memory; combination-encoding content-addressable memory; resistance switch; crossbar array; content density
- Citation
- IEEE ACCESS, v.7, pp.137620 - 137628
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ACCESS
- Volume
- 7
- Start Page
- 137620
- End Page
- 137628
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/15183
- DOI
- 10.1109/ACCESS.2019.2942150
- ISSN
- 2169-3536
- Abstract
- Recently, resistance switch-based content-addressable memory (RCAM) has been proposed as an alternative to the mainstream static random-access memory-based CAM because of its high integration potential and low static energy consumption. However, RCAM has a lower data density due to the use of a pair of resistance switches for a single bit of contents (0.5 bit/switch) than resistive random access memory (1 bit/switch). In this paper, we propose a new type of RCAM referred to as combination-encoding CAM (CECAM). In the N-CECAM, a single unit consists of N high and N low resistance state switches whose combination collectively represents binary contents, yielding a data density of approximately 0.85 bit/switch when N = 10, for instance. The key to the CECAM is the encoding of an n-bit search key as a 2N-digit key and its decoding. To this end, we propose a simple algorithm for encoding and decoding and its implementation in digital circuitry.
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