Highly-stable write-once-read-many-times switching behaviors of 1D-1R memristive devices based on graphene quantum dot nanocomposites
DC Field | Value | Language |
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dc.contributor.author | Sung, Sihyun | - |
dc.contributor.author | Wu, Chaoxing | - |
dc.contributor.author | Jung, Hyun Soo | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2021-08-02T12:29:31Z | - |
dc.date.available | 2021-08-02T12:29:31Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2018-12 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/15229 | - |
dc.description.abstract | One diode and one resistor (1D-1R) memristive devices based on inorganic Schottky diodes and poly(methylsilsesquioxane) (PMSSQ):graphene quantum dot (GQD) hybrid nanocomposites were fabricated to achieve stable memory characteristics. Current-voltage (I-V) curves for the Al/PMSSQ:GQDs/Al/p-Si/Al devices at room temperature exhibited write-once, read-many-times memory (WORM) characteristics with an ON/OFF ratio of as large as 10(4) resulting from the formation of a 1D-1R structure. I-V characteristics of the WORM 1D-1R device demonstrated that the memory and the diode behaviors of the 1D-1R device functioned simultaneously. The retention time of the WORM 1D-1R devices could be maintained at a value larger than 104 s under ambient conditions. The operating mechanisms of the devices were analyzed on the basis of the I-V results and with the aid of the energy band diagram. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Highly-stable write-once-read-many-times switching behaviors of 1D-1R memristive devices based on graphene quantum dot nanocomposites | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1038/s41598-018-30538-y | - |
dc.identifier.scopusid | 2-s2.0-85051534962 | - |
dc.identifier.wosid | 000441444100028 | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.8, no.1 | - |
dc.relation.isPartOf | SCIENTIFIC REPORTS | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 8 | - |
dc.citation.number | 1 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.subject.keywordPlus | NONVOLATILE MEMORY DEVICE | - |
dc.subject.keywordPlus | POLYMER | - |
dc.subject.keywordPlus | LAYER | - |
dc.identifier.url | https://www.nature.com/articles/s41598-018-30538-y | - |
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