Highly-stable write-once-read-many-times switching behaviors of 1D-1R memristive devices based on graphene quantum dot nanocompositesopen access
- Authors
- Sung, Sihyun; Wu, Chaoxing; Jung, Hyun Soo; Kim, Tae Whan
- Issue Date
- Dec-2018
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- SCIENTIFIC REPORTS, v.8, no.1
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCIENTIFIC REPORTS
- Volume
- 8
- Number
- 1
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/15229
- DOI
- 10.1038/s41598-018-30538-y
- ISSN
- 2045-2322
- Abstract
- One diode and one resistor (1D-1R) memristive devices based on inorganic Schottky diodes and poly(methylsilsesquioxane) (PMSSQ):graphene quantum dot (GQD) hybrid nanocomposites were fabricated to achieve stable memory characteristics. Current-voltage (I-V) curves for the Al/PMSSQ:GQDs/Al/p-Si/Al devices at room temperature exhibited write-once, read-many-times memory (WORM) characteristics with an ON/OFF ratio of as large as 10(4) resulting from the formation of a 1D-1R structure. I-V characteristics of the WORM 1D-1R device demonstrated that the memory and the diode behaviors of the 1D-1R device functioned simultaneously. The retention time of the WORM 1D-1R devices could be maintained at a value larger than 104 s under ambient conditions. The operating mechanisms of the devices were analyzed on the basis of the I-V results and with the aid of the energy band diagram.
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