Damage Modeling of a Low-Noise Amplifier in an RF Front-End Induced by a High Power Electromagnetic Pulse
- Authors
- Baek, Ji-Eun; Cho, Young-Maan; Ko, Kwang-Cheol
- Issue Date
- May-2017
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Bipolar transistor amplifiers; electromagnetic coupling; low-noise amplifier (LNA); programmable circuit; semiconductor device breakdown
- Citation
- IEEE TRANSACTIONS ON PLASMA SCIENCE, v.45, no.5, pp.798 - 804
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON PLASMA SCIENCE
- Volume
- 45
- Number
- 5
- Start Page
- 798
- End Page
- 804
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/152434
- DOI
- 10.1109/TPS.2017.2684196
- ISSN
- 0093-3813
- Abstract
- The RF front-end is a very vulnerable part of the coupling paths that are induced by a high power electromagnetic (HPEM) pulse. Existing studies found through experiment or simulation that low-noise amplifiers (LNAs) often break down or are damaged, which causes the malfunction of the RF front-end. To protect the RF front-end, the damage process of LNAs based on theory is required in detail. This paper summarizes the damage process, and a new library is developed describing the damage phenomenon of LNAs by using user-defined elements. The model can be combined with other circuit models, and can also offer variation of the internal parameters of LNAs by HPEM pulse. Existing physical protection methods have high costs and complexity, and it is difficult to provide perfect protection. Thus, the proposed model can contribute to protection studies utilizing a circuit model.
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