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Room temperature ferromagnetic and ambipolar behaviors of MoS2 doped by manganese oxide using an electrochemical method
- Authors
- Park, Chang-Soo; Chu, Dongil; Shon, Yoon; Lee, Juwon; Kim, Eun Kyu
- Issue Date
- May-2017
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.110, no.22, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 110
- Number
- 22
- Start Page
- 1
- End Page
- 4
- ISSN
- 0003-6951
- Abstract
- We report the room temperature ferromagnetic and ambipolar behaviours of MoS2 thin flakes doped with MnO2 by electrochemical adsorption. The MoS2 thin film was determined to be multilayered over four layers from Raman analysis. The Mn-oxide doped MoS2 has a ferromagnetic hysteresis at room temperature and showed a weak remnant magnetization, 0.02 emu/g. From the gate dependent transfer characteristics of the MoS2 field effect transistor, it appeared that the Mn-oxide doped MoS2 has ambipolar behaviours with field effect mobilities of about 3.7 and 16.3 cm(2)V(-1)s(-1), respectively, for electrons and holes.
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