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Temperature-dependent anisotropic magnetoresistance inversion behaviors in Fe₃O₄ films

Authors
Yoon, Kap SooHong, Jin Pyo
Issue Date
Feb-2017
Publisher
ELSEVIER SCIENCE BV
Keywords
Fe3O4 thin films; Inversion behavior; Domain wall scattering
Citation
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.423, pp.7 - 11
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Volume
423
Start Page
7
End Page
11
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/152963
DOI
10.1016/j.jmmm.2016.09.067
ISSN
0304-8853
Abstract
We address the abnormal anisotropic magnetoresistance (AMR) reversal feature of half-metallic polycrystalline Fe3O4 films occurring at a specific temperature. Experimental results revealed a positive to negative MR transition in the Fe3O4 films at 264 K, which reflect the influence of additional domain wall scattering. These features was described by a correlation between domain wall resistance and inversion behavior of AMR with additional domain wall scattering factors. We further describe a possible model based on systematic structural and electrical measurements that employs a temperature-dependent domain wall width and spin diffusion length of the conducting electrons. This model allows for spin-flipping scattering of spin polarized electrons inside a proper domain width.
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