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High-Performance Amorphous InGaZnO Thin-Film Transistors via Staked Ultrathin High-k TaOx Buffer Layer Grown on Low-k SiO2 Gate Oxide

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dc.contributor.authorKang, Tae Sung-
dc.contributor.authorYoon, Kap Soo-
dc.contributor.authorBaek, Gwang Ho-
dc.contributor.authorKo, Won Bae-
dc.contributor.authorYang, Seung Mo-
dc.contributor.authorYeon, Bum Mo-
dc.contributor.authorHong, Jin Pyo-
dc.date.accessioned2022-07-14T23:37:51Z-
dc.date.available2022-07-14T23:37:51Z-
dc.date.issued2017-00-
dc.identifier.issn2199-160X-
dc.identifier.issn2199-160X-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/153245-
dc.description.abstractEfficient reduction of interfacial defect states is achieved by using an intentionally controlled ultrathin TaOx buffer layer. This process allows for the fabrication of IGZO thin-film transistors (TFTs) with highly enhanced performance. These results may open a new avenue for the development of high-performance oxide-based TFTs.-
dc.format.extent8-
dc.language영어-
dc.language.isoENG-
dc.publisherWiley-VCH Verlag-
dc.titleHigh-Performance Amorphous InGaZnO Thin-Film Transistors via Staked Ultrathin High-k TaOx Buffer Layer Grown on Low-k SiO2 Gate Oxide-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1002/aelm.201600452-
dc.identifier.scopusid2-s2.0-85012034351-
dc.identifier.wosid000395638200007-
dc.identifier.bibliographicCitationAdvanced Electronic Materials, v.3, no.3, pp 1 - 8-
dc.citation.titleAdvanced Electronic Materials-
dc.citation.volume3-
dc.citation.number3-
dc.citation.startPage1-
dc.citation.endPage8-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordPlusMETASTABILITY-
dc.subject.keywordPlusSPECTROSCOPY-
dc.subject.keywordPlusSTABILITY-
dc.subject.keywordPlusTFT-
dc.subject.keywordAuthorIGZO TFTs-
dc.subject.keywordAuthortantalum oxide-
dc.subject.keywordAuthorthermalization energy-
dc.subject.keywordAuthorthin film transistors-
dc.identifier.urlhttps://onlinelibrary.wiley.com/doi/10.1002/aelm.201600452-
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