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High-Performance Amorphous InGaZnO Thin-Film Transistors via Staked Ultrathin High-k TaOx Buffer Layer Grown on Low-k SiO2 Gate Oxide
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kang, Tae Sung | - |
| dc.contributor.author | Yoon, Kap Soo | - |
| dc.contributor.author | Baek, Gwang Ho | - |
| dc.contributor.author | Ko, Won Bae | - |
| dc.contributor.author | Yang, Seung Mo | - |
| dc.contributor.author | Yeon, Bum Mo | - |
| dc.contributor.author | Hong, Jin Pyo | - |
| dc.date.accessioned | 2022-07-14T23:37:51Z | - |
| dc.date.available | 2022-07-14T23:37:51Z | - |
| dc.date.created | 2021-05-12 | - |
| dc.date.issued | 2017 | - |
| dc.identifier.issn | 2199-160X | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/153245 | - |
| dc.description.abstract | Efficient reduction of interfacial defect states is achieved by using an intentionally controlled ultrathin TaOx buffer layer. This process allows for the fabrication of IGZO thin-film transistors (TFTs) with highly enhanced performance. These results may open a new avenue for the development of high-performance oxide-based TFTs. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | WILEY | - |
| dc.title | High-Performance Amorphous InGaZnO Thin-Film Transistors via Staked Ultrathin High-k TaOx Buffer Layer Grown on Low-k SiO2 Gate Oxide | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Hong, Jin Pyo | - |
| dc.identifier.doi | 10.1002/aelm.201600452 | - |
| dc.identifier.scopusid | 2-s2.0-85012034351 | - |
| dc.identifier.wosid | 000395638200007 | - |
| dc.identifier.bibliographicCitation | ADVANCED ELECTRONIC MATERIALS, v.3, no.3, pp.1 - 8 | - |
| dc.relation.isPartOf | ADVANCED ELECTRONIC MATERIALS | - |
| dc.citation.title | ADVANCED ELECTRONIC MATERIALS | - |
| dc.citation.volume | 3 | - |
| dc.citation.number | 3 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 8 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | MOBILITY | - |
| dc.subject.keywordPlus | METASTABILITY | - |
| dc.subject.keywordPlus | SPECTROSCOPY | - |
| dc.subject.keywordPlus | STABILITY | - |
| dc.subject.keywordPlus | TFT | - |
| dc.subject.keywordAuthor | IGZO TFTs | - |
| dc.subject.keywordAuthor | tantalum oxide | - |
| dc.subject.keywordAuthor | thermalization energy | - |
| dc.subject.keywordAuthor | thin film transistors | - |
| dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/aelm.201600452 | - |
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Related Researcher
- Hong, Jin Pyo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)