Unusually efficient photocurrent extraction in monolayer van der Waals heterostructure by tunnelling through discretized barriersopen access
- Authors
- Yu, Woo Jong; Vu, Quoc An; Oh, Hyemin; Nam, Hong Gi; Zhou, Hailong; Cha, Soonyoung; Kim, Joo-Youn; Carvalho, Alexandra; Jeong, Mun Seok; Choi, Hyunyong; Castro Neto, A. H.; Lee, Young Hee; Duan, Xiangfeng
- Issue Date
- Nov-2016
- Publisher
- NATURE PUBLISHING GROUP
- Keywords
- TRANSITION-METAL DICHALCOGENIDES; INSULATOR-TRANSITION
- Citation
- NATURE COMMUNICATIONS, v.7, pp.1 - 9
- Indexed
- SCIE
SCOPUS
- Journal Title
- NATURE COMMUNICATIONS
- Volume
- 7
- Start Page
- 1
- End Page
- 9
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/153567
- DOI
- 10.1038/ncomms13278
- ISSN
- 20411723
- Abstract
- Two-dimensional layered transition-metal dichalcogenides have attracted considerable interest for their unique layer-number-dependent properties. In particular, vertical integration of these two-dimensional crystals to form van der Waals heterostructures can open up a new dimension for the design of functional electronic and optoelectronic devices. Here we report the layer-number-dependent photocurrent generation in graphene/MoS2/graphene heterostructures by creating a device with two distinct regions containing one-layer and seven-layer MoS2 to exclude other extrinsic factors. Photoresponse studies reveal that photoresponsivity in one-layer MoS2 is surprisingly higher than that in seven-layer MoS2 by seven times. Spectral-dependent studies further show that the internal quantum efficiency in one-layer MoS2 can reach a maximum of 65%, far higher than the 7% in seven-layer MoS2. Our theoretical modelling shows that asymmetric potential barriers in the top and bottom interfaces of the graphene/one-layer MoS2/graphene heterojunction enable asymmetric carrier tunnelling, to generate usually high photoresponsivity in one-layer MoS2 device.
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