Work Function Modification of Tungsten-Doped Indium Oxides Deposited by the Co-Sputtering Method
- Authors
- Oh, Gyujin; Jeon, Jia; Lee, Kyoung Su; Kim, Eun Kyu
- Issue Date
- May-2016
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Indium Tungsten Oxide; Work Function Modification; Transparent Conducting Oxide; Magnetron Co-Sputtering
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.5, pp.5109 - 5113
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 16
- Number
- 5
- Start Page
- 5109
- End Page
- 5113
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/154695
- DOI
- 10.1166/jnn.2016.12189
- ISSN
- 1533-4880
- Abstract
- We have studied the work function modification of tungsten-doped indium oxides (IWOs) through the co-sputtering of indium oxide (In2O3) and indium tungsten oxide (In2O3 80 wt%+ WO3 20 wt%) via a radio frequency (RF) magnetron sputtering system. By controlling the elemental deposition of IWOs, the resultant work functions varied from 4.37 eV to 4.1 eV. The IWO thin films showed excellent properties for application as transparent conducting oxide materials in the region of 0 to 2.43 at.% of tungsten versus the total metal content. The carrier concentration of n-type IWO thin films varied from 8.39x10(19) cm(-3) to 8.58x10(21) cm(-3), while the resistivity varied from 3.15x10(-4) Omega cm to 2.26x10(-3) Omega cm. The largest measured optical band gap was 3.82 eV determined at 2.43 at.% of tungsten atoms relative to the total amount of metal atoms, while the smallest optical band gap was 3.6 eV at 4.78 at.% of tungsten. IWO films containing more than 2.43 at.% of tungsten atoms relative to the total number of metal atoms revealed an average transmittance of over 80% within the visible light region.
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