Metal-oxide thin-film transistor-based pH sensor with a silver nanowire top gate electrode
- Authors
- Yoo, Tae-Hee; Sang, Byoung-In; Wang, Byung-Yong; Lim, Dae-Soon; Kang, Hyun Wook; Choi, Won Kook; Lee, Young Tack; Oh, Young-Jei; Hwang, Do Kyung
- Issue Date
- Apr-2016
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Metal-oxide thin-film transistor; Silver nanowire; pH sensor
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.68, no.7, pp.901 - 907
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 68
- Number
- 7
- Start Page
- 901
- End Page
- 907
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/154849
- DOI
- 10.3938/jkps.68.901
- ISSN
- 0374-4884
- Abstract
- Amorphous InGaZnO (IGZO) metal-oxide-semiconductor thin-film transistors (TFTs) are one of the most promising technologies to replace amorphous and polycrystalline Si TFTs. Recently, TFT-based sensing platforms have been gaining significant interests. Here, we report on IGZO transistor-based pH sensors in aqueous medium. In order to achieve stable operation in aqueous environment and enhance sensitivity, we used Al2O3 grown by using atomic layer deposition (ALD) and a porous Ag nanowire (NW) mesh as the top gate dielectric and electrode layers, respectively. Such devices with a Ag NW mesh at the top gate electrode rapidly respond to the pH of solutions by shifting the turn-on voltage. Furthermore, the output voltage signals induced by the voltage shifts can be directly extracted by implantation of a resistive load inverter.
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