Metal–Insulator–Semiconductor Diode Consisting of Two-Dimensional Nanomaterials
- Authors
- Jeong, Hyun; Oh, Hye Min; Bang, Seungho; Jeong, Hyeon Jun; An, Sung-Jin; Han, Gang Hee; Kim, Hyun; Yun, Seok Joon; Kim, Ki Kang; Park, Jin Cheol; Lee, Young Hee; Lerondel, Gilles; Jeong, Mun Seok
- Issue Date
- Feb-2016
- Publisher
- AMER CHEMICAL SOC
- Keywords
- carrier tunneling; Graphene; h-BN; metal-insulator-semiconductor diode; monolayer MoS2
- Citation
- NANO LETTERS, v.16, no.3, pp.1858 - 1862
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANO LETTERS
- Volume
- 16
- Number
- 3
- Start Page
- 1858
- End Page
- 1862
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/155125
- DOI
- 10.1021/acs.nanolett.5b04936
- ISSN
- 1530-6984
- Abstract
- We present a novel metal-insulator-semiconductor (MIS) diode consisting of graphene, hexagonal BN, and monolayer MoS2 for application in ultrathin nanoelectronics. The MIS heterojunction structure was fabricated by vertically stacking layered materials using a simple wet chemical transfer method. The stacking of each layer was confirmed by confocal scanning Raman spectroscopy and device performance was evaluated using current versus voltage (I-V) and photocurrent measurements. We clearly observed better current rectification and much higher current flow in the MIS diode than in the p-n junction and the metal-semiconductor diodes made of layered materials. The I-V characteristic curve of the MIS diode indicates that current flows mainly across interfaces as a result of carrier tunneling. Moreover, we observed considerably high photocurrent from the MIS diode under visible light illumination.
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