One-dimensional InGaZnO Field-effect Transistor on a Polyimide Wire Substrate for an Electronic Textile
DC Field | Value | Language |
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dc.contributor.author | Yoo, Tae-Hee | - |
dc.contributor.author | Sang, Byoung-In | - |
dc.contributor.author | Hwang, Do Kyung | - |
dc.date.accessioned | 2022-07-15T18:31:40Z | - |
dc.date.available | 2022-07-15T18:31:40Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-02 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/155182 | - |
dc.description.abstract | Amorphous InGaZnO (IGZO) is a promising semiconducting material to replace amorphous and polycrystalline Si. IGZO-based field-effect transistors (FET) can be versatile platforms for various electronic or optoelectronic applications. Here, we report on a one-dimensional (1-D) IGZO FET fabricated on a flexible polyimide wire substrate for electronic textiles (e-textiles). This flexible 1-D IGZO FET shows a high mobility of 18.18 cm(2)/Vs with a relatively good on/off current ratio of 10(4) at operating voltages below 5 V. Furthermore, a resistive-load inverter is implemented by connecting the 1-D IGZO FET to an external load resistor. Such an inverter exhibits obvious voltage switching characteristics, verifying the potential it is being a basic building block for an e-textile circuit system. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | One-dimensional InGaZnO Field-effect Transistor on a Polyimide Wire Substrate for an Electronic Textile | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sang, Byoung-In | - |
dc.identifier.doi | 10.3938/jkps.68.599 | - |
dc.identifier.scopusid | 2-s2.0-84959487330 | - |
dc.identifier.wosid | 000371528200017 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.68, no.4, pp.599 - 603 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 68 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 599 | - |
dc.citation.endPage | 603 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002084451 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | WEARABLE ELECTRONICS | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | FIBER | - |
dc.subject.keywordPlus | INVERTER | - |
dc.subject.keywordAuthor | InGaZnO | - |
dc.subject.keywordAuthor | Electronic textiles | - |
dc.subject.keywordAuthor | 1-D field-effect transistor | - |
dc.subject.keywordAuthor | Resistive-load inverter | - |
dc.identifier.url | https://link.springer.com/article/10.3938/jkps.68.599 | - |
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