One-dimensional InGaZnO Field-effect Transistor on a Polyimide Wire Substrate for an Electronic Textile
- Authors
- Yoo, Tae-Hee; Sang, Byoung-In; Hwang, Do Kyung
- Issue Date
- Feb-2016
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- InGaZnO; Electronic textiles; 1-D field-effect transistor; Resistive-load inverter
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.68, no.4, pp.599 - 603
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 68
- Number
- 4
- Start Page
- 599
- End Page
- 603
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/155182
- DOI
- 10.3938/jkps.68.599
- ISSN
- 0374-4884
- Abstract
- Amorphous InGaZnO (IGZO) is a promising semiconducting material to replace amorphous and polycrystalline Si. IGZO-based field-effect transistors (FET) can be versatile platforms for various electronic or optoelectronic applications. Here, we report on a one-dimensional (1-D) IGZO FET fabricated on a flexible polyimide wire substrate for electronic textiles (e-textiles). This flexible 1-D IGZO FET shows a high mobility of 18.18 cm(2)/Vs with a relatively good on/off current ratio of 10(4) at operating voltages below 5 V. Furthermore, a resistive-load inverter is implemented by connecting the 1-D IGZO FET to an external load resistor. Such an inverter exhibits obvious voltage switching characteristics, verifying the potential it is being a basic building block for an e-textile circuit system.
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