Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS_2open access
- Authors
- Cho, Doohee; Cheon, Sang mo; Kim, Ki-Seok; Lee, Sung-Hoon; Cho, Yong-Heum; Cheong, Sang-Wook; Yeom, Han Woong
- Issue Date
- Jan-2016
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- NATURE COMMUNICATIONS, v.7, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- NATURE COMMUNICATIONS
- Volume
- 7
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/155251
- DOI
- 10.1038/ncomms10453
- ISSN
- 2041-1723
- Abstract
- The controllability over strongly correlated electronic states promises unique electronic devices. A recent example is an optically induced ultrafast switching device based on the transition between the correlated Mott insulating state and a metallic state of a transition metal dichalcogenide 1T-TaS2. However, the electronic switching has been challenging and the nature of the transition has been veiled. Here we demonstrate the nanoscale electronic manipulation of the Mott state of 1T-TaS2. The voltage pulse from a scanning tunnelling microscope switches the insulating phase locally into a metallic phase with irregularly textured domain walls in the charge density wave order inherent to this Mott state. The metallic state is revealed as a correlated phase, which is induced by the moderate reduction of electron correlation due to the charge density wave decoherence.
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