Highly conductive air-stable ZnO thin film formation under in situ UV illumination for an indium-free transparent electrode
- Authors
- Cho, Boram; Kim, Hongbum; Yang, Dasom; Shrestha, Nabeen K.; Sung, Myung Mo
- Issue Date
- 2016
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- RSC ADVANCES, v.6, no.73, pp.69027 - 69032
- Indexed
- SCIE
SCOPUS
- Journal Title
- RSC ADVANCES
- Volume
- 6
- Number
- 73
- Start Page
- 69027
- End Page
- 69032
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/155495
- DOI
- 10.1039/c6ra13430k
- ISSN
- 2046-2069
- Abstract
- Zinc oxide (ZnO) is considered as the strongest alternative to tin doped indium oxide (ITO) - a commonly used, but an expensive state-of-the-art material for transparent conducting electrodes. This work reports the low temperature atomic layer deposition (ALD) of a highly transparent, and highly conductive air-stable thin film of ZnO under in situ UV irradiation of the growing film. X-ray photoelectron spectroscopy (XPS) reveals that the UV irradiation generates oxygen vacancies, partially removes O-H bonds, and thereby improves the electrical conductivity. Thus, in contrast to 0.25 U cm resistivity of the pristine ZnO film, the in situ UV irradiated ZnO film shows an electrical resistivity of 5.5 x 10(-4) U cm, and an optical transparency of nearly 90%, which are closer to that of ITO. In addition, even on prolonged exposure of the film to air, it demonstrates high stability against the degradation of the electrical conductivity.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 서울 자연과학대학 > 서울 화학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/155495)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.