The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
- Authors
- Jang, Woochool; Jeon, Heeyoung; Song, Hyoseok; Kim, Honggi; Park, Jingyu; Kim, Hyunjung; Jeon, Hyeongtag
- Issue Date
- Dec-2015
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- gate spacers; NH3 plasma; plasma power; remote plasma atomic layer deposition; silicon nitrides; thin films
- Citation
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.212, no.12, pp.2785 - 2790
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Volume
- 212
- Number
- 12
- Start Page
- 2785
- End Page
- 2790
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/155718
- DOI
- 10.1002/pssa.201532274
- ISSN
- 1862-6300
- Abstract
- We investigated the effects of NH3 plasma power on characteristics of low-temperature silicon nitride thin films for application of a gate spacer. SiNx thin film was deposited on a Si(100) substrate by remote plasma atomic layer deposition (RPALD) using trisilylamine (TSA) as a Si precursor and NH3 gas as a reactant. NH3 remote plasma was analyzed with optical emission spectroscopy (OES) and it largely consisted of NH and H. As the plasma power increased, more NH and H radicals were generated and a proportion of NH radicals in the plasma increased, which resulted in the slight increase of the high-N content and low-H content in SiNx thin film. The low-H content with nearly stoichiometric SiNx thin films improve etch rate properties. The densities of RPALD SiNx thin film were 2.7 g cm(-3) and almost the same regardless of plasma power. RPALD SiNx thin films showed a low leakage current density of 10(-7)A cm(-2) at 2 MV cm(-1) and a breakdown voltage of approximately 8 MV cm(-1).
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