The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
DC Field | Value | Language |
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dc.contributor.author | Jang, Woochool | - |
dc.contributor.author | Jeon, Heeyoung | - |
dc.contributor.author | Song, Hyoseok | - |
dc.contributor.author | Kim, Honggi | - |
dc.contributor.author | Park, Jingyu | - |
dc.contributor.author | Kim, Hyunjung | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.date.accessioned | 2022-07-15T19:59:35Z | - |
dc.date.available | 2022-07-15T19:59:35Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2015-12 | - |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/155718 | - |
dc.description.abstract | We investigated the effects of NH3 plasma power on characteristics of low-temperature silicon nitride thin films for application of a gate spacer. SiNx thin film was deposited on a Si(100) substrate by remote plasma atomic layer deposition (RPALD) using trisilylamine (TSA) as a Si precursor and NH3 gas as a reactant. NH3 remote plasma was analyzed with optical emission spectroscopy (OES) and it largely consisted of NH and H. As the plasma power increased, more NH and H radicals were generated and a proportion of NH radicals in the plasma increased, which resulted in the slight increase of the high-N content and low-H content in SiNx thin film. The low-H content with nearly stoichiometric SiNx thin films improve etch rate properties. The densities of RPALD SiNx thin film were 2.7 g cm(-3) and almost the same regardless of plasma power. RPALD SiNx thin films showed a low leakage current density of 10(-7)A cm(-2) at 2 MV cm(-1) and a breakdown voltage of approximately 8 MV cm(-1). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1002/pssa.201532274 | - |
dc.identifier.scopusid | 2-s2.0-84949625461 | - |
dc.identifier.wosid | 000366589900020 | - |
dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.212, no.12, pp.2785 - 2790 | - |
dc.relation.isPartOf | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.citation.title | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.citation.volume | 212 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 2785 | - |
dc.citation.endPage | 2790 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordAuthor | gate spacers | - |
dc.subject.keywordAuthor | NH3 plasma | - |
dc.subject.keywordAuthor | plasma power | - |
dc.subject.keywordAuthor | remote plasma atomic layer deposition | - |
dc.subject.keywordAuthor | silicon nitrides | - |
dc.subject.keywordAuthor | thin films | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/pssa.201532274 | - |
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