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The impact of thermal-assist UV/Ozone treatment in amorphous zinc oxynitride thin film transistors
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ok, Kyung-chul | - |
| dc.contributor.author | Jeong, Hyun-Jun | - |
| dc.contributor.author | Lee, Hyun-mo | - |
| dc.contributor.author | Park, Jin Seong | - |
| dc.date.accessioned | 2022-07-15T20:06:29Z | - |
| dc.date.available | 2022-07-15T20:06:29Z | - |
| dc.date.issued | 2015-12 | - |
| dc.identifier.issn | 1883-2490 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/155790 | - |
| dc.description.abstract | We fabricated high mobility (μsat > 40cm2A/s) and stable (ΔVm < ± 1V @PBS and NBS for 1hr) amorphous zinc oxynitride thin film transistors (a-ZnON TFTs) using thenrial assist UV/ozone treatment. The electrical characteristics of a-ZnON TFTs were investigated by chemical bonding properties. | - |
| dc.format.extent | 2 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.title | The impact of thermal-assist UV/Ozone treatment in amorphous zinc oxynitride thin film transistors | - |
| dc.type | Article | - |
| dc.identifier.scopusid | 2-s2.0-85056386845 | - |
| dc.identifier.bibliographicCitation | Proceedings of the International Display Workshops, v.2, pp 660 - 661 | - |
| dc.citation.title | Proceedings of the International Display Workshops | - |
| dc.citation.volume | 2 | - |
| dc.citation.startPage | 660 | - |
| dc.citation.endPage | 661 | - |
| dc.type.docType | Conference Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Amorphous films | - |
| dc.subject.keywordPlus | Chemical bonds | - |
| dc.subject.keywordPlus | Nitrides | - |
| dc.subject.keywordPlus | Plasma stability | - |
| dc.subject.keywordPlus | Temperature | - |
| dc.subject.keywordPlus | Thin film circuits | - |
| dc.subject.keywordPlus | Thin films | - |
| dc.subject.keywordPlus | Zinc compounds | - |
| dc.subject.keywordPlus | Chemical bondings | - |
| dc.subject.keywordPlus | Electrical characteristic | - |
| dc.subject.keywordPlus | High mobility | - |
| dc.subject.keywordPlus | Low temperatures | - |
| dc.subject.keywordPlus | Oxynitrides | - |
| dc.subject.keywordPlus | Thermal assist | - |
| dc.subject.keywordPlus | UV/ozone treatment | - |
| dc.subject.keywordPlus | Zinc oxynitride | - |
| dc.subject.keywordPlus | Thin film transistors | - |
| dc.subject.keywordAuthor | Instability | - |
| dc.subject.keywordAuthor | Low temperature | - |
| dc.subject.keywordAuthor | Oxynitride | - |
| dc.subject.keywordAuthor | Thin film transistors | - |
| dc.subject.keywordAuthor | UVO | - |
| dc.identifier.url | http://www.hylime.kr/default/publication/conference.php?com_board_basic=read_form&sub=03&&com_board_search_code=&com_board_search_value1=&com_board_search_value2=&com_board_page=9&&com_board_id=20&&com_board_idx=24 | - |
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Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)