Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO
DC Field | Value | Language |
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dc.contributor.author | Park, Kyung Sun | - |
dc.contributor.author | Kim, Sejoon | - |
dc.contributor.author | Kim, Hongbum | - |
dc.contributor.author | Kwon, Deokhyeon | - |
dc.contributor.author | Lee, Yong-Eun Koo | - |
dc.contributor.author | Min, Sung-Wook | - |
dc.contributor.author | Im, Seongil | - |
dc.contributor.author | Choi, Hyoung Joon | - |
dc.contributor.author | Lim, Seulky | - |
dc.contributor.author | Shin, Hyunjung | - |
dc.contributor.author | Koo, Sang Man | - |
dc.contributor.author | Sung, Myung Mo | - |
dc.date.accessioned | 2022-07-15T20:17:49Z | - |
dc.date.available | 2022-07-15T20:17:49Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2015-11 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/155946 | - |
dc.description.abstract | Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with a hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in the free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field-effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Koo, Sang Man | - |
dc.contributor.affiliatedAuthor | Sung, Myung Mo | - |
dc.identifier.doi | 10.1039/c5nr05392g | - |
dc.identifier.scopusid | 2-s2.0-84945249266 | - |
dc.identifier.wosid | 000363650700015 | - |
dc.identifier.bibliographicCitation | NANOSCALE, v.7, no.42, pp.17702 - 17709 | - |
dc.relation.isPartOf | NANOSCALE | - |
dc.citation.title | NANOSCALE | - |
dc.citation.volume | 7 | - |
dc.citation.number | 42 | - |
dc.citation.startPage | 17702 | - |
dc.citation.endPage | 17709 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | POLYCRYSTALLINE GRAPHENE | - |
dc.subject.keywordPlus | GRAIN-BOUNDARIES | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | ELECTRODES | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | PROSPECTS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2015/NR/C5NR05392G | - |
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