Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO
- Authors
- Park, Kyung Sun; Kim, Sejoon; Kim, Hongbum; Kwon, Deokhyeon; Lee, Yong-Eun Koo; Min, Sung-Wook; Im, Seongil; Choi, Hyoung Joon; Lim, Seulky; Shin, Hyunjung; Koo, Sang Man; Sung, Myung Mo
- Issue Date
- Nov-2015
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- NANOSCALE, v.7, no.42, pp.17702 - 17709
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOSCALE
- Volume
- 7
- Number
- 42
- Start Page
- 17702
- End Page
- 17709
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/155946
- DOI
- 10.1039/c5nr05392g
- ISSN
- 2040-3364
- Abstract
- Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with a hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in the free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field-effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity.
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