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Solution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers
- Authors
- Lin, Jian; Ooi, Poh Choon; Li, Fushan; Guo, Tailiang; Kim, Tae Whan
- Issue Date
- Nov-2015
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- Graphene quantum dots; silver nanowires; flexible; non-volatile memory
- Citation
- IEEE Electron Device Letters, v.36, no.11, pp 1212 - 1214
- Pages
- 3
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- IEEE Electron Device Letters
- Volume
- 36
- Number
- 11
- Start Page
- 1212
- End Page
- 1214
- ISSN
- 0741-3106
1558-0563
- Abstract
- Non-volatile memory (NVM) devices using graphene quantum dots (GQDs) as charge trapping sites were fabricated with silver nanowires as top electrodes using solution process. The stacking structure consists of GQDs embedded between polymethylsilsesquioxane layers constructed on transparent flexible substrate. Hysteresis window was observed in the current-voltage plots, and the NVM devices are reprogrammable and stable up to 1 x 10(4) s with a distinct ON/OFF ratio of 10(4). In addition, the memory device shows the stable hysteresis window without obvious degradation upon bending under different curvature radii.
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