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IEEE Electron Device Letters

Journal Title

  • IEEE Electron Device Letters

ISSN

  • E 1558-0563 | P 0741-3106

Publisher

  • Institute of Electrical and Electronics Engineers

Listed on(Coverage)

JCR 1997-2019
SJR 1999-2019
CiteScore 2011-2019
SCI 2010-2019
SCIE 2010-2021
CC 2016-2021
SCOPUS 2017-2020

Active

  • Active

    based on the information

    • SCOPUS:2020-10

Country

  • USA

Aime & Scopes

  • IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.

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Article List

1 - 20 out of 50 results.

SCIESCOPUS
Memory Window Expansion in HfO2-Based FeFETs Through Trap-to-Dipole ConversionGo to Link

Han, Changhyeon; Kwak, Been; Kim, Hyun-Min; Kwak, Sangeun; Kwon, Daewoong

ArticleIssue Date2026CitationIEEE ELECTRON DEVICE LETTERS, v.47, no.5, pp 905 - 908PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Crystalline IGO TFTs with High Reliability under DRAM-Compatible 600 °C N2 Thermal BudgetsGo to Link

Oh, Jeong Eun; Kim, Nahyun; Chae, Jiwon; Cho, Min Hee; Ha, Daewon; Jeong, Jae Kyeong

ArticleIssue Date2026CitationIEEE Electron Device Letters, v.47, no.5, pp 925 - 928PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Band Engineering of Gate Interlayer for Low-voltage Operation and Enhanced Reliability in Gate-injection Type FeFETsGo to Link

Kim, Hoon; Kim, Giuk; Choi, Hyojun; Joh, Hongrae; Kang, Hyunjun; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki; Ha, Daewon, et al.

ArticleIssue Date2026CitationIEEE ELECTRON DEVICE LETTERS, v.47, no.4, pp 728 - 731PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
IGZO/PbS QD/Ga2O3-Based Optical Synapse Transistors with High PPF for NIR DetectionGo to Link

Jeong, Yong Jun; Kang, He Young; Oh, Jinwook; Kim, Gwang-Bok; Yoon, Seong Hun; Bang, Seon Woong; Chang, Joon-Hyuk; Jeong, Jae Kyeong

ArticleIssue Date2026CitationIEEE Electron Device Letters, v.47, no.1, pp 104 - 107PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Highly Uniform and Flicker-Free Pixel Circuit for Wide Variable Refresh Rate AMOLED DisplaysGo to Link

Wee, Sung-Min; Kim, Younsik; Chung, Kyung-Hoon; Yu, Byungchang; Lim, Jaemyung; Kwon, Oh-Kyong

ArticleIssue Date2025CitationIEEE ELECTRON DEVICE LETTERS, v.46, no.12, pp 2285 - 2288PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
In-situ Surface Energy Engineering for ALD-Derived Highly Reliable Top Gate In2O3 Thin-Film TransistorsGo to Link

Eun Oh, Jeong; Hee Choi, Cheol; Kim, Taikyu; Hun Yoon, Seong; Woong Bang, Seon; Chae, Jiwon; Im, Changik; Hee Cho, Min; Yun, Pilsang; Ha, Daewon, et al.

ArticleIssue Date2025CitationIEEE ELECTRON DEVICE LETTERS, v.46, no.11, pp 2050 - 2053PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
The Impact of Through Silicon Metal(TSM) contact on Performance and thermal reliability in CFETGo to Link

Shin, Yunho; Kwak, Been; Myeong, Ilho; Kwon, Daewoong

ArticleIssue Date2025CitationIEEE Electron Device Letters, v.46, no.10, pp 1897 - 1900PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Tailoring Crystal Growth via Sn Incorporation for High-Performance ALD IGO FETsGo to Link

Kim, Gwang-bok; Jeong, Joo-hee; Park, Soojin; Choi, Sunghyun; An, Jiseong; Park, Kwangmin; Jeong, Jae Kyeong

ArticleIssue Date2025CitationIEEE Electron Device Letters, v.46, no.10, pp 1781 - 1784PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Enhancing Program Speed and Diminishing Read After Write Delay by Metal Work Function EngineeringGo to Link

Shin, Seokjoong; Kim, Giuk; Choi, Hyojun; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki; Ha, Daewon; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2025CitationIEEE Electron Device Letters, v.46, no.8, pp 1433 - 1436PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Imprinted Antiferroelectric with Low Damage Process for High Performance Negative Capacitance NAND Flash MemoryGo to Link

Lee, Sangho; Kim, Giuk; Nam, Yunseok; Jeong, Yeongseok; Kim, Taeho; Shin, Hunbeom; Lee, Sangmok; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2025CitationIEEE Electron Device Letters, v.46, no.4, pp 572 - 575PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
A Pixel Circuit with Improved Luminance Uniformity and Flicker for AMOLED Displays with a Wide VRR Range of 15 Hz to 360 HzGo to Link

Kim, Younsik; Wee, Sung-Min; Chung, Kyunghoon; Yu, Byungchang; Lim, Jaemyung; Kwon, Oh-Kyong

ArticleIssue Date2025CitationIEEE Electron Device Letters, v.46, no.4, pp 600 - 603PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Optimizing De-trap Pulses in Gate-injection Type Ferroelectric NAND Cells to Minimize Read After Write Delay IssueGo to Link

Kim, Giuk; Choi, Hyojun; Cho, Hongrae; Lee, Sangho; Shin, Hunbeom; Kang, Hyunjun; Kim, Hoon; Shin, Seokjoong; Park, Seonjae; Kwon, Sunseong, et al.

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.12, pp 2359 - 2362PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Positive Interaction between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect TransistorGo to Link

Choi, Hyojun; Kim, Giuk; Lee, Sangho; Shin, Hunbeom; Lim, Youngjin; Kim, Kang; Kim, Do-Hyung; Oh, Il-Kwon; Park, Sang-Hee Ko; Ahn, Jinho, et al.

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.12, pp 2351 - 2354PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Exceptional Immunity of Drain-Induced Barrier Lowering Effect in a-IGZTO Transistors via Favorable Coupling Effects of Metal-H BondingGo to Link

Kim, Gwang-Bok; Kim, Se Eun; Kim, Yena; Son, Kyeong-Seok; Park, Joon Seok; Lee, Sunhee; Jeong, Jae Kyeong

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.11, pp 2130 - 2133PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Low-Frequency Noise Characteristics of Recessed Channel Ferroelectric Field-Effect TransistorsGo to Link

Kwak, Been; Kim, Jangsaeng; Lee, Kitae; Shin, Wonjun; Kwon, Daewoong

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.11, pp 2118 - 2121PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Beneficial Hydrogen Doping in Single Spinel Phase Crystallized IZTO Thin-Film TransistorsGo to Link

Kim, Gwang-Bok; Kim, Taikyu; Bak, Jinwon; Choi, Cheol Hee; Chung, Sang Won; Kang, Youngho; Jeong, Jae Kyeong

ArticleIssue Date2024CitationIEEE ELECTRON DEVICE LETTERS, v.45, no.10, pp 1831 - 1834PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Robust 1/f Noise Unaffected by Program/Erase Cycling-Induced Damage in Ferroelectric Schottky Barrier FETsGo to Link

Shin, Wonjun; Koo, Ryun-Han; Kim, Sangwoo; Kwon, Dongseok; Kim, Jae-Joon; Kwon, Daewoong; Lee, Jong-Ho

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.9, pp 1645 - 1648PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
First Demonstration of Thermally Stable Zr:HfO2 Ferroelectrics Via Inserting AlN InterlayerGo to Link

Lee, Sangmok; Kim, Giuk; Lee, Sangho; Shin, Hunbeom; Lim, Youngjin; Kim, Kang; Kim, Do-Hyung; Oh, Il-Kwon; Ko Park, Sang-Hee; Ahn, Jinho, et al.

ArticleIssue Date2024CitationIEEE ELECTRON DEVICE LETTERS, v.45, no.9, pp 1578 - 1581PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS IN
SCIESCOPUS
True Random Number Generator using Memcapacitor with Charge Trapping LayerGo to Link

Hwang, Hwiho; Song, Min Suk; Youn, Sangwook; Kim, Hyungjin

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.8, pp 1464 - 1467PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Optimizing Green Perovskite Light-Emitting Diodes through a Solution-Processed Triple-Layer HTL StrategyGo to Link

Kim, Gwang-il; Mo, Yurim; Na, Hyejin; Lee, Seon Joo; Choi, Sungho; Choi, Hyosung; Lee, Jaemin

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.6, pp 1028 - 1031PublisherInstitute of Electrical and Electronics Engineers
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