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IEEE Electron Device Letters

Journal Title

  • IEEE Electron Device Letters

ISSN

  • E 1558-0563 | P 0741-3106

Publisher

  • Institute of Electrical and Electronics Engineers

Listed on(Coverage)

JCR 1997-2019
SJR 1999-2019
CiteScore 2011-2019
SCI 2010-2019
SCIE 2010-2021
CC 2016-2021
SCOPUS 2017-2020

Active

  • Active

    based on the information

    • SCOPUS:2020-10

Country

  • USA

Aime & Scopes

  • IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.

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Article List

1 - 20 out of 57 results.

SCIESCOPUS
True Random Number Generator using Memcapacitor with Charge Trapping LayerGo to Link

Hwang, Hwiho; Song, Min Suk; Youn, Sangwook; Kim, Hyungjin

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.8, pp 1464 - 1467PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Comparative Analysis of n- and p-type Ferroelectric Tunnel Junctions Through Understanding of non-FE Resistance SwitchingGo to Link

Koo, Ryun-Han; Shin, Wonjun; Ryu, Sangwoo; Lee, Kyungmin; Park, Sung-Ho; Im, Jiseong; Ko, Jong-Hyun; Kim, Jeong-Hyun; Kwon, Dongseok; Kim, Jae-Joon, et al.

ArticleIssue Date2023CitationIEEE Electron Device Letters, v.44, no.10, pp 1624 - 1627PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Unraveling Threshold Voltage Instability in Ferroelectric Junctionless FETs using Low-Frequency Noise Measurement with Base BiasGo to Link

Shin, Wonjun; Koo, Ryun-Han; Kim, Sangwoo; Kwon, Dongseok; Kim, Jae-Joon; Kwon, Daewoong; Lee, Jong-Ho

ArticleIssue Date2023CitationIEEE Electron Device Letters, v.44, no.10, pp 1768 - 1771PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Channel-Length-Dependent Low-Frequency Noise Characteristics of Ferroelectric Junctionless Poly-Si Thin-Film TransistorsGo to Link

Shin, Wonjun; Kim, Sangwoo; Koo, Ryun-Han; Kwon, Dongseok; Kim, Jae-Joon; Kwon, Deok-Hwang; Kwon, Daewoong; Lee, Jong-Ho

ArticleIssue Date2023CitationIEEE Electron Device Letters, v.44, no.6, pp.1003 - 1006PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
All-Sputter-Deposited Hf0.5Zr0.5O2 Double-Gate Ferroelectric Thin-Film Transistor With Amorphous Indium-Gallium-Zinc Oxide ChannelGo to Link

Jeong, Soi; Han, Changhyeon; Yim, Jiyong; Kim, Jeonghan; Kwon, Ki Ryun; Kim, Sangwoo; Park, Eun Chan; You, Ji Won; Choi, Rino; Kwon, Daewoong

ArticleIssue Date2023CitationIEEE ELECTRON DEVICE LETTERS, v.44, no.5, pp.749 - 752PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Optimization of Photodiode Design through Analysis of Full-Well Capacity and Image Lag in 0.5 μm CMOS Image Sensors with Vertical Transfer GatesGo to Link

Park, Jae Hyeon; Suk, Chan Hee; Kim, Sungchul; Kim, Jae Ho; Kwon, UiHui; Kim, Dae Sin; Yoo, Keon-Ho; Kim, Tae Whan

ArticleIssue Date2022CitationIEEE Electron Device Letters, v.43, no.10, pp.1697 - 1700PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Spiking Neural Network With Weight-Sharing Synaptic Array for Multi-input ProcessingGo to Link

Song, Seunghwan; Kim, Munhyeon; Jeon, Bosung; Ryu, Donghyun; Kim, Sihyun; Lee, Kitae; Lee, Jong-Ho; Kim, Jae-Joon; Shim, Wonbo; Kwon, Daewoong, et al.

ArticleIssue Date2022CitationIEEE ELECTRON DEVICE LETTERS, v.43, no.10, pp.1657 - 1660PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling PerspectivesGo to Link

Shin, Wonjun; Bae, Jong-Ho; Kwon, Dongseok; Koo, Ryun-Han; Park, Byung-Gook; Kwon, Daewoong; Lee, Jong-Ho

ArticleIssue Date2022CitationIEEE ELECTRON DEVICE LETTERS, v.43, no.6, pp.958 - 961PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Damage-Induced Ferroelectricity in HfOx-Based Thin FilmGo to Link

Min, Kyung Kyu; Kim, Hyun-Min; Kim, Yeonwoo; Kim, Changha; Yu, Junsu; Lee, Jong-Ho; Park, Byung-Gook; Kwon, Daewoong

ArticleIssue Date2022CitationIEEE ELECTRON DEVICE LETTERS, v.43, no.5, pp.713 - 716PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Monolithic 3D Integration With Photosensor and CMOS Circuits Using Ion-Cut Layer TransferGo to Link

Han, Hoonhee; Cho, Hyeon Cheol; Jang, Seok Min; Choi, Changhwan

ArticleIssue Date2022CitationIEEE ELECTRON DEVICE LETTERS, v.43, no.3, pp 430 - 433PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Performance Evaluation of Scaled ZnO Stacked Nanosheet Channel Ternary Field Effect TransistorGo to Link

Lee, Ho-In; Kim, So-Young; Kim, Seung-Mo; Lee, Yongsu; Lee, Hae-Won; Yu, Sung Ho; Sung, Myung Mo; Hwang, Hyeon Jun; Lee, Byoung Hun

ArticleIssue Date2022CitationIEEE ELECTRON DEVICE LETTERS, v.43, no.2, pp.323 - 326PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Highly Reliable Selection Behavior with Controlled Ag Doping of Nano-polycrystalline ZnO Layer for 3D X-Point Framework

Sahota, Akshay; Kim, Harrison Sejoon; Mohan, Jaidah; Jung, Yong Chan; Hernandez-Arriaga, Heber; Le, Dan N.; Kim,Si Joon; Lee, Jang-Sik; Ahn, Jinho; Kim, Jiyoung

ArticleIssue Date2022CitationIEEE Electron Device Letters, v.43, no.1, pp.21 - 24PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Suppression of Statistical Variability in Stacked Nanosheet Using Floating Fin StructureGo to Link

Kim, Munhyeon; Kim, Sihyun; Lee, Kitae; Lee, Jong-Ho; Park, Byung-Gook; Kwon, Daewoong

ArticleIssue Date2021CitationIEEE ELECTRON DEVICE LETTERS, v.42, no.11, pp.1580 - 1583PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Wakeup-free and endurance-robust ferroelectric field-effect transistor memory using high pressure annealingGo to Link

Manh-Cuong Nguyen; Kim, Sihyun; Lee, Kitae; Yim, Ji-Yong; Choi, Rino; Kwon, Daewoong

ArticleIssue Date2021CitationIEEE ELECTRON DEVICE LETTERS, v.42, no.9, pp.1295 - 1298PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Physical Unclonable Functions Using Ferroelectric Tunnel JunctionsGo to Link

Kim, Sihyun; Lee, Kitae; Oh, Min-Hye; Lee, Jong-Ho; Park, Byung-Gook; Kwon, Daewoong

ArticleIssue Date2021CitationIEEE ELECTRON DEVICE LETTERS, v.42, no.6, pp.816 - 819PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Effects of Tensile Strain on Dynamic and Static Inverters Using Amorphous Indium-Gallium-Zinc-Oxide TFTsGo to Link

Kim, Yong-Duck; Han, Ki-Lim; Kim, Jun-Hyeok; Lee, Jong-Il; Lee, Won-Bum; Park, Jinseong; Choi, Byong-Deok

ArticleIssue Date2021CitationIEEE Electron Device Letters, v.42, no.3, pp.359 - 362PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Polycrystalline Indium Gallium Tin Oxide Thin-Film Transistors with High Mobility Exceeding 100 cm2/VsGo to Link

Kim, Bo Kyoung; On, Nuri; Choi, Cheol Hee; Kim, Min Jae; Kang, Shinhyuck; Lim, Jun Hyung; Jeong, Jae Kyeong

ArticleIssue Date2021CitationIEEE Electron Device Letters, v.42, no.3, pp.347 - 350PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Effects of Process-Induced Defects on Polarization Switching in Ferroelectric Tunneling Junction MemoryGo to Link

Lee, Kitae; Kim, Sihyun; Lee, Jong-Ho; Park, Byung-Gook; Kwon, Daewoong

ArticleIssue Date2021CitationIEEE ELECTRON DEVICE LETTERS, v.42, no.3, pp.323 - 326PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Highly scaled, high endurance, Ω-gate, nanowire ferroelectric FET memory transistorsGo to Link

Bae, Jong-Ho; Kwon, Daewoong; Jeon, Namho; Cheema, Suraj; Tan, Ava Jiang; Hu, Chenming; Salahuddin, Sayeef

ArticleIssue Date2020CitationIEEE ELECTRON DEVICE LETTERS, v.41, no.1, pp.1637 - 1640PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
AlGaN/GaN Schottky HEMTs with UV/O3 Plasma-treated Gate InterfaceGo to Link

Kim, Kwangeun; Kim, Tong June; Zhang, Huilong; Liu, Dong; Jung, Yei Hwan; Gong, Jiarui; Ma, Zhenqiang

ArticleIssue Date2020CitationIEEE ELECTRON DEVICE LETTERS, v.41, no.10, pp.1488 - 1491PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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