Low-Frequency Noise Characteristics of Recessed Channel Ferroelectric Field-Effect Transistors

Abstract

This study investigates low-frequency noise (LFN) and random telegraph noise (RTN) characteristics of hafnium-zirconium oxide (HZO) ferroelectric field-effect transistors with recessed channels (R-FeFETs) from a reliability analysis perspective. As the delay time increases after the program (PGM), the threshold voltage (VTH) is shifted by trapped electron detrapping and does not saturate. From LFN measurement, it is revealed that the origin of 1/f noise in the R-FeFETs is carrier number fluctuation. RTN is also observed with a distinct corner frequency (fc ≈ 480 Hz). It is confirmed that the trap is distributed locally at the DE/FE interface (z ≈ 1.5 nm) due to the structural specificity of R-FeFETs, resulting in RTN. The results of this work provide valuable insight for understanding the reliability issue of R-FeFETs.