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Robust 1/f Noise Unaffected by Program/Erase Cycling-Induced Damage in Ferroelectric Schottky Barrier FETs
- Authors
- Shin, Wonjun; Koo, Ryun-Han; Kim, Sangwoo; Kwon, Dongseok; Kim, Jae-Joon; Kwon, Daewoong; Lee, Jong-Ho
- Issue Date
- Sep-2024
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- 1/f noise; Schottky barrier ferroelectric FETs (SB FeFETs); program/erase cycling
- Citation
- IEEE Electron Device Letters, v.45, no.9, pp 1645 - 1648
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Electron Device Letters
- Volume
- 45
- Number
- 9
- Start Page
- 1645
- End Page
- 1648
- ISSN
- 0741-3106
1558-0563
- Abstract
- This study investigates the 1/f noise characteristics of Schottky barrier (SB) ferroelectric field-effect transistors (FeFETs) and their response to program/erase (P/E) cycling-induced damage. The robustness of SB FeFETs to this damage is demonstrated, with the 1/f noise remaining unaffected even after the complete collapse of the memory window. The origin of this robustness is attributed to the separation of 1/f noise source (SB contact) and the region where P/E cycling-induced damage occurs (ferroelectric-dielectric interface).
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Related Researcher
- Kwon, Daewoong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)