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Robust 1/f Noise Unaffected by Program/Erase Cycling-Induced Damage in Ferroelectric Schottky Barrier FETs
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shin, Wonjun | - |
| dc.contributor.author | Koo, Ryun-Han | - |
| dc.contributor.author | Kim, Sangwoo | - |
| dc.contributor.author | Kwon, Dongseok | - |
| dc.contributor.author | Kim, Jae-Joon | - |
| dc.contributor.author | Kwon, Daewoong | - |
| dc.contributor.author | Lee, Jong-Ho | - |
| dc.date.accessioned | 2026-04-07T03:00:08Z | - |
| dc.date.available | 2026-04-07T03:00:08Z | - |
| dc.date.issued | 2024-09 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.issn | 1558-0563 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/212062 | - |
| dc.description.abstract | This study investigates the 1/f noise characteristics of Schottky barrier (SB) ferroelectric field-effect transistors (FeFETs) and their response to program/erase (P/E) cycling-induced damage. The robustness of SB FeFETs to this damage is demonstrated, with the 1/f noise remaining unaffected even after the complete collapse of the memory window. The origin of this robustness is attributed to the separation of 1/f noise source (SB contact) and the region where P/E cycling-induced damage occurs (ferroelectric-dielectric interface). | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Institute of Electrical and Electronics Engineers | - |
| dc.title | Robust 1/f Noise Unaffected by Program/Erase Cycling-Induced Damage in Ferroelectric Schottky Barrier FETs | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1109/LED.2024.3425155 | - |
| dc.identifier.scopusid | 2-s2.0-85198301100 | - |
| dc.identifier.wosid | 001302508200024 | - |
| dc.identifier.bibliographicCitation | IEEE Electron Device Letters, v.45, no.9, pp 1645 - 1648 | - |
| dc.citation.title | IEEE Electron Device Letters | - |
| dc.citation.volume | 45 | - |
| dc.citation.number | 9 | - |
| dc.citation.startPage | 1645 | - |
| dc.citation.endPage | 1648 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordPlus | Ferroelectricity | - |
| dc.subject.keywordPlus | Field effect transistors | - |
| dc.subject.keywordPlus | Logic gates | - |
| dc.subject.keywordAuthor | 1/f noise | - |
| dc.subject.keywordAuthor | Schottky barrier ferroelectric FETs (SB FeFETs) | - |
| dc.subject.keywordAuthor | program/erase cycling | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/10589368 | - |
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Related Researcher
- Kwon, Daewoong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)