Optimizing Green Perovskite Light-Emitting Diodes through a Solution-Processed Triple-Layer HTL Strategy
- Authors
- Kim, Gwang-il; Mo, Yurim; Na, Hyejin; Lee, Seon Joo; Choi, Sungho; Choi, Hyosung; Lee, Jaemin
- Issue Date
- Jun-2024
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- Solvents; Films; Perovskites; Nonhomogeneous media; Performance evaluation; Organic light emitting diodes; Indium tin oxide; Hole-transporting layers; light emitting diodes; perovskites; quantum dots
- Citation
- IEEE Electron Device Letters, v.45, no.6, pp 1028 - 1031
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Electron Device Letters
- Volume
- 45
- Number
- 6
- Start Page
- 1028
- End Page
- 1031
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/209511
- DOI
- 10.1109/LED.2024.3387982
- ISSN
- 0741-3106
1558-0563
- Abstract
- Improving hole injection/transport and achieving charge balance through a multilayer hole-transporting layer (HTL) structure is a key technology for enhancing the performance of perovskite light-emitting diodes (PeLEDs). However, the stacking of a multilayer HTL through a solution process is constrained by the issue of erosion. We propose the use of 1,2-dichloroethane (DCE) as an orthogonal solvent for PTAA HTL, and a triple-layer HTL of [PTAA/TFB/PVK] was successfully realized solely through a solution-process. With an increase in the number of HTLs, there was an observed rise in external quantum efficiency (EQE) and a simultaneous reduction in turn-on voltage (Von) of the PeLED devices, attributed to a gradual decrease in the hole-injection barrier. In addition to the HTL, the integration of a double-layer electron-transporting layer (ETL) of [TPBi/PO-T2T] further enhanced overall device performance, resulting in a maximum EQE over 12 % and a Von as low as 2.22 V. The source of this enhancement was also investigated through time-resolved photoluminescence analysis and single-carrier device characterizations.
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